TY - GEN
T1 - Solar thermophotovoltaic using Al2O3/Er3Al5O12 eutectic composite selective emitter
AU - Yugami, Hiroo
AU - Sai, Hitoshi
AU - Nakamura, Kazuya
AU - Nakagawa, Narihito
AU - Ohtsubo, Hideki
N1 - Publisher Copyright:
© 2000 IEEE.
PY - 2000
Y1 - 2000
N2 - Thermal emission properties of Al2O3/Er3Al6O12 eutectic composite are studied for the application of selective emitter of thermophotovoltaic (TPV) power generator. Since this material has unique structure, high mechanical performance would be expected. Selective emission bands at wavelength 1.5μm due to Er3+ ions is observed. Since these emission bands match up the sensitive region of GaSb PV cell, Al2O3/Er3AlsO12 eutectic composite is a suitable emitter material for TPV systems. Solar TPV system with a dish-type solar concentrator (diameter= 1.56m) has been made and tested using the selective emitter material. The performance and component temperature are studied for the system equipped with broad band SiC and Al2O3/Er3Al5O12 eutectic composite selective emitters. Low thermal load for TPV optical components is confirmed for the selective emitter system. The improvement of fill factor of GaSb PV cells is also observed for selective emitter system.
AB - Thermal emission properties of Al2O3/Er3Al6O12 eutectic composite are studied for the application of selective emitter of thermophotovoltaic (TPV) power generator. Since this material has unique structure, high mechanical performance would be expected. Selective emission bands at wavelength 1.5μm due to Er3+ ions is observed. Since these emission bands match up the sensitive region of GaSb PV cell, Al2O3/Er3AlsO12 eutectic composite is a suitable emitter material for TPV systems. Solar TPV system with a dish-type solar concentrator (diameter= 1.56m) has been made and tested using the selective emitter material. The performance and component temperature are studied for the system equipped with broad band SiC and Al2O3/Er3Al5O12 eutectic composite selective emitters. Low thermal load for TPV optical components is confirmed for the selective emitter system. The improvement of fill factor of GaSb PV cells is also observed for selective emitter system.
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U2 - 10.1109/PVSC.2000.916107
DO - 10.1109/PVSC.2000.916107
M3 - Conference contribution
AN - SCOPUS:84949559468
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1214
EP - 1217
BT - Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Y2 - 15 September 2000 through 22 September 2000
ER -