Solution-processed single-crystalline organic transistors on patterned ultrathin gate insulators

Junto Tsurumi, Atefeh Yousefi Amin, Toshihiro Okamoto, Chikahiko Mitsui, Kazuo Takimiya, Hiroyuki Matsui, Marcus Halik, Jun Takeya

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


Single-crystalline organic transistors of 3,11-didecyl-dinaphtho[2,3-d: 2′,3′-d′]benzo[1,2-b:4,5-b′]dithiophene (C 10-DNBDT-NW) and 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene (C10-DNTT) were fabricated by solution processes on top of the patterned hybrid ultrathin gate dielectrics consisting of 3.6 nm-thick aluminum oxide and self-assembled monolayers (SAMs). Due to the excellent crystallinity of the channel films, bottom-gate and top-contact field-effect transistors exhibited the average field-effect mobility of 3.7 cm2/V s and 4.3 cm2/V s for C10-DNBDT-NW and C10-DNTT, respectively. These are the first successful devices of solution-processed single-crystalline transistors on ultrathin gate dielectrics with the mobility above 1 cm2/V s, opening the way to develop low-power-consumption and high-performance printed circuits.

Original languageEnglish
Pages (from-to)1184-1188
Number of pages5
JournalOrganic Electronics
Issue number6
Publication statusPublished - 2014 Jun
Externally publishedYes


  • Hybrid Dielectrics
  • Organic transistor
  • Self-assembly monolayer
  • Single crystal
  • Solution process

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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