TY - JOUR
T1 - Solution-processed single-crystalline organic transistors on patterned ultrathin gate insulators
AU - Tsurumi, Junto
AU - Amin, Atefeh Yousefi
AU - Okamoto, Toshihiro
AU - Mitsui, Chikahiko
AU - Takimiya, Kazuo
AU - Matsui, Hiroyuki
AU - Halik, Marcus
AU - Takeya, Jun
N1 - Funding Information:
A.Y.A. and M.H. acknowledge the funding of the ‘Excellence Initiative’ of the German Research Council (DFG) supporting the Cluster of Excellence ‘Engineering of Advanced Materials’ ( www.eam.uni-erlangen.de ).
Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2014/6
Y1 - 2014/6
N2 - Single-crystalline organic transistors of 3,11-didecyl-dinaphtho[2,3-d: 2′,3′-d′]benzo[1,2-b:4,5-b′]dithiophene (C 10-DNBDT-NW) and 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene (C10-DNTT) were fabricated by solution processes on top of the patterned hybrid ultrathin gate dielectrics consisting of 3.6 nm-thick aluminum oxide and self-assembled monolayers (SAMs). Due to the excellent crystallinity of the channel films, bottom-gate and top-contact field-effect transistors exhibited the average field-effect mobility of 3.7 cm2/V s and 4.3 cm2/V s for C10-DNBDT-NW and C10-DNTT, respectively. These are the first successful devices of solution-processed single-crystalline transistors on ultrathin gate dielectrics with the mobility above 1 cm2/V s, opening the way to develop low-power-consumption and high-performance printed circuits.
AB - Single-crystalline organic transistors of 3,11-didecyl-dinaphtho[2,3-d: 2′,3′-d′]benzo[1,2-b:4,5-b′]dithiophene (C 10-DNBDT-NW) and 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene (C10-DNTT) were fabricated by solution processes on top of the patterned hybrid ultrathin gate dielectrics consisting of 3.6 nm-thick aluminum oxide and self-assembled monolayers (SAMs). Due to the excellent crystallinity of the channel films, bottom-gate and top-contact field-effect transistors exhibited the average field-effect mobility of 3.7 cm2/V s and 4.3 cm2/V s for C10-DNBDT-NW and C10-DNTT, respectively. These are the first successful devices of solution-processed single-crystalline transistors on ultrathin gate dielectrics with the mobility above 1 cm2/V s, opening the way to develop low-power-consumption and high-performance printed circuits.
KW - Hybrid Dielectrics
KW - Organic transistor
KW - Self-assembly monolayer
KW - Single crystal
KW - Solution process
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U2 - 10.1016/j.orgel.2014.02.028
DO - 10.1016/j.orgel.2014.02.028
M3 - Article
AN - SCOPUS:84898455289
SN - 1566-1199
VL - 15
SP - 1184
EP - 1188
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
IS - 6
ER -