Source/Drain Contact Resistance of Silicided Thin-Film SOI MOSFET’s

Kunihiro Suzuki, Tetsu Tanaka, Yoshiharu Tosaka, Toshihiro Sugii, Satoshi Andoh

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


We developed a source/drain contact (S/D) resistance model for silicided thin-film SOI MOSFET’s, and analyzed its dependence on device parameters considering the variation in the thickness of the silicide and residual SOI layers due to silicidation. The S/D resistance is insensitive to the silicide thickness over a wide range of thicknesses; however, it increases significantly when the silicide thickness is less than one hundredth of initial SOI thickness, and when almost all the SOI layer is silicided. To obtain a low S/D resistance, the specific contact resistance must be reduced, that is, the doping concentration at the silicide-SOI interface must be more than 102() cm-3.

Original languageEnglish
Pages (from-to)1007-1012
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number6
Publication statusPublished - 1994 Jun


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