@inproceedings{5de651a0bd964988a968cb4af555235d,
title = "Spatial distribution of carrier concentration in 4H-SiC crystal grown by solution method",
abstract = "We investigated the spatial distribution of carrier concentration in n-type 4H-SiC grown by the solution method using the peak frequency of the longitudinal optical phonon-plasmon coupled (LOPC) mode of the Raman spectra on the surface. The carrier concentration at the position of the smooth terrace was higher than the carrier concentration at the position where the macrosteps were formed. This indicates the nitrogen incorporation efficiently occurs on the smooth surface where the density of macrosteps is relatively low. The different incorporation of nitrogen depending on the surface morphology can be understood from the view point of the adsorption time of impurity on the terrace. The present result implies that the uniform surface morphology is necessary to achieve uniform doping concentration in SiC crystal.",
keywords = "4H-SiC, Carrier concentration, Nitrogen doping, Solution growth, Surface morphology",
author = "Wang, {Zhen Jiang} and Takahiko Kawaguchi and Kenta Murayama and Kenta Aoyagi and Shunta Harada and Miho Tagawa and Takenobu Sakai and Tomohisa Kato and Toru Ujihara",
note = "Publisher Copyright: {\textcopyright} 2016 Trans Tech Publications, Switzerland. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 ; Conference date: 04-10-2015 Through 09-10-2015",
year = "2016",
doi = "10.4028/www.scientific.net/MSF.858.57",
language = "English",
isbn = "9783035710427",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "57--60",
editor = "Fabrizio Roccaforte and Filippo Giannazzo and {La Via}, Francesco and Roberta Nipoti and Danilo Crippa and Mario Saggio",
booktitle = "Silicon Carbide and Related Materials 2015",
}