Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE

Koji Onomitsu, Hideo Fukui, Takashi Maeda, Yoshiro Hirayama, Yoshiji Horikoshi

Research output: Contribution to journalConference articlepeer-review

11 Citations (Scopus)


The spatially separated doping of Mn and Be in GaAs is successfully performed to increase the total hole concentration and thus to improve the ferromagnetic transition temperature without creating undesirable complex defects. All the layers are grown with low-temperature migration-enhanced epitaxy. The layer structure composed of δ-doped Be and Mn layers separated by 3-monolayer undoped GaAs is found to be useful to increase the hole concentration without creating Mn-Be complex defects. The Mn-Be spatially separated doping samples show considerably improved hole concentration and other electrical transport characteristics compared with those grown by simultaneous Mn-Be co-doping. They also show much better magnetization characteristics than those with only Mn δ-doped samples, indicating that the holes supplied from the spatially separated Be-doped layers are effective to improve the magnetic properties of GaMnAs.

Original languageEnglish
Pages (from-to)699-703
Number of pages5
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 2005 May 1
Event13th International Conference on Molecular Beam Epitaxy -
Duration: 2004 Aug 222004 Aug 27


  • A1. Doping
  • A3. Migration enhanced epitaxy
  • A3. Molecular beam epitaxy
  • B2. Magnetic materials
  • B2. Semiconducting III-V materials


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