TY - JOUR
T1 - Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE
AU - Onomitsu, Koji
AU - Fukui, Hideo
AU - Maeda, Takashi
AU - Hirayama, Yoshiro
AU - Horikoshi, Yoshiji
N1 - Funding Information:
The authors wish to thank Mr. Shibue of the Materials Characterization Central Laboratory (MCCL) of Waseda University for his cooperation. This work is partly supported by the COE Program “Molecular Nano-Engineering”, by the 21st century COE “Practical Nano-Chemistry”, by the Grand-in-aid for Scientific Research on Priority Area “Semiconductor Nanospintronics” from the Ministry of Education, Science, Sports and Culture, Japan, and by the Grand-in-aid for Scientific Research (B) from Japan Society for the Promotion of Science (JSPS).
PY - 2005/5/1
Y1 - 2005/5/1
N2 - The spatially separated doping of Mn and Be in GaAs is successfully performed to increase the total hole concentration and thus to improve the ferromagnetic transition temperature without creating undesirable complex defects. All the layers are grown with low-temperature migration-enhanced epitaxy. The layer structure composed of δ-doped Be and Mn layers separated by 3-monolayer undoped GaAs is found to be useful to increase the hole concentration without creating Mn-Be complex defects. The Mn-Be spatially separated doping samples show considerably improved hole concentration and other electrical transport characteristics compared with those grown by simultaneous Mn-Be co-doping. They also show much better magnetization characteristics than those with only Mn δ-doped samples, indicating that the holes supplied from the spatially separated Be-doped layers are effective to improve the magnetic properties of GaMnAs.
AB - The spatially separated doping of Mn and Be in GaAs is successfully performed to increase the total hole concentration and thus to improve the ferromagnetic transition temperature without creating undesirable complex defects. All the layers are grown with low-temperature migration-enhanced epitaxy. The layer structure composed of δ-doped Be and Mn layers separated by 3-monolayer undoped GaAs is found to be useful to increase the hole concentration without creating Mn-Be complex defects. The Mn-Be spatially separated doping samples show considerably improved hole concentration and other electrical transport characteristics compared with those grown by simultaneous Mn-Be co-doping. They also show much better magnetization characteristics than those with only Mn δ-doped samples, indicating that the holes supplied from the spatially separated Be-doped layers are effective to improve the magnetic properties of GaMnAs.
KW - A1. Doping
KW - A3. Migration enhanced epitaxy
KW - A3. Molecular beam epitaxy
KW - B2. Magnetic materials
KW - B2. Semiconducting III-V materials
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U2 - 10.1016/j.jcrysgro.2004.12.095
DO - 10.1016/j.jcrysgro.2004.12.095
M3 - Conference article
AN - SCOPUS:18444411367
SN - 0022-0248
VL - 278
SP - 699
EP - 703
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
T2 - 13th International Conference on Molecular Beam Epitaxy
Y2 - 22 August 2004 through 27 August 2004
ER -