Spatio-time-resolved cathodoluminescence studies of wide-bandgap group-III nitride semiconductors

Shigefusa F. Chichibu, Yoichi Ishikawa, Kouji Hazu, Kentaro Furusawa

Research output: Contribution to journalReview articlepeer-review

4 Citations (Scopus)


Spatio-time-resolved cathodoluminescence (STRCL), which uses a femtosecond-laser-driven pulsed photoelectron gun instead of the cw electron gun of spatially resolved cathodoluminescence (CL) combined with scanning electron microscopy (SEM), is introduced for probing local luminescence dynamics in quantum structures and nanostructures of wide-bandgap (WBG) semiconductors. As STRCL is based on SEM, multi-scale characterization of a structure with high spatial definition is possible, and the use of pulsed electron-beams allows the sub-picosecond excitation of any WBG semiconductor. By using our STRCL system, high-resolution near-band-edge CL imaging allowed the visualization of nonradiative recombination channels in a low dislocation density GaN substrate: the local CL decay curves of the sample at 300 K showed a nearly single-exponential lineshape, and the lifetimes were sensitively position-dependent. Free- and bound-exciton recombination dynamics with the energy transfer processes in GaN, AlN, and hexagonal BN, as well as local emission dynamics in Al0.68Ga0.32N quantum wells, were successfully investigated in the UV to deep UV wavelengths down to 200 nm.

Original languageEnglish
Article number020501
JournalJapanese Journal of Applied Physics
Issue number2
Publication statusPublished - 2020


Dive into the research topics of 'Spatio-time-resolved cathodoluminescence studies of wide-bandgap group-III nitride semiconductors'. Together they form a unique fingerprint.

Cite this