TY - GEN
T1 - Spatio-time-resolved cathodoluminescence studies on the Si-doping effects in high AlN mole fraction AlxGa1-xN multiple quantum wells grown on an AlN template by metalorganic vapor phase epitaxy
AU - Chichibu, S. F.
AU - Ishikawa, Y.
AU - Furusawa, K.
AU - Miyake, H.
AU - Hiramatsu, K.
N1 - Publisher Copyright:
© 2015 Japan Society of Applied Physics - JSAP.
PY - 2016/5/9
Y1 - 2016/5/9
N2 - In order to understand the reason why doping with Si in the wells enhanced the NBE emission efficiency, STRCL measurements and 1D-SCSP calculations were carried out on the Al0.68Ga0.32N / Al0.77Ga0.23N MQWs with different Si-doped layers. The increase in τNR, i.e decrease in the concentration of NRCs, by the Si-doping in the wells were correlated with improved lateral uniformity of the QW transition energy, which is most likely caused by the increase in the terrace width during the growth. The results suggest the importance of H3SiNH2 doping-reactant formation that provides wetting conditions thanks to the surface Si-N bonds and simultaneously gives rise to enhanced decomposition of NH3, both of which lower the total energy and reduce the concentration of NRCs composed of cation vacancies.
AB - In order to understand the reason why doping with Si in the wells enhanced the NBE emission efficiency, STRCL measurements and 1D-SCSP calculations were carried out on the Al0.68Ga0.32N / Al0.77Ga0.23N MQWs with different Si-doped layers. The increase in τNR, i.e decrease in the concentration of NRCs, by the Si-doping in the wells were correlated with improved lateral uniformity of the QW transition energy, which is most likely caused by the increase in the terrace width during the growth. The results suggest the importance of H3SiNH2 doping-reactant formation that provides wetting conditions thanks to the surface Si-N bonds and simultaneously gives rise to enhanced decomposition of NH3, both of which lower the total energy and reduce the concentration of NRCs composed of cation vacancies.
UR - http://www.scopus.com/inward/record.url?scp=84973596885&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84973596885&partnerID=8YFLogxK
U2 - 10.1109/IWJT.2015.7467069
DO - 10.1109/IWJT.2015.7467069
M3 - Conference contribution
AN - SCOPUS:84973596885
T3 - 15th International Workshop on Junction Technology, IWJT 2015
SP - 29
EP - 33
BT - 15th International Workshop on Junction Technology, IWJT 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 15th International Workshop on Junction Technology, IWJT 2015
Y2 - 11 June 2015 through 12 June 2015
ER -