Spectral characterization of Mg2Si pn -junction diode depending on RTA periods

Masaaki Takezaki; Yusuke Yamanaka; Masahito Uchikoshi; Haruhiko Udono

doi:10.1002/pssc.201300356

Spectral characterization of Mg₂Si pn -junction diode depending on RTA periods

Masaaki Takezaki, Yusuke Yamanaka, Masahito Uchikoshi, Haruhiko Udono

IMRAM - Collaborative Research Division of Non-ferrousMetallurgy and Environmental Science

Ibaraki University

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We have studied the effect of thermal annealing periods on the optoelectrical properties of Mg₂Si pn -junction diodes fabricated by a conventional thermal diffusion process of Ag acceptor. The Au/Ag/n -Mg₂Si (carrier concentration = 2 × 10¹⁵cm^-3, resistivity = 5-10 Ωcm) substrate was annealed at 550 °C in the Ar-atmosphere using a rapid thermal annealing (RTA) furnace. The annealing periods were varied between 2 and 10 minutes. Clear rectifying behavior of J -V characteristics was observed for the diodes annealed for more than 2 minutes. Spectral responsivity from the photon energy threshold of approximately 0.6 eV was demonstrated with the Mg₂Si pn -junction diodes under the zero bias condition at room temperature. The maximum intensity of spectral responsivity was increased with decrease the annealing period. The spectral responsivity of the diode with the RTA periods of 4 minutes was approximately 4 times higher than that of 10 minutes annealed one. (

Original language	English
Pages (from-to)	1812-1814
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	10
Issue number	12
DOIs	https://doi.org/10.1002/pssc.201300356
Publication status	Published - 2013 Dec

Keywords

Diode
Mg2Si
Pn-junction
Thermal diffusion

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10.1002/pssc.201300356

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title = "Spectral characterization of Mg2Si pn -junction diode depending on RTA periods",

abstract = "We have studied the effect of thermal annealing periods on the optoelectrical properties of Mg2Si pn -junction diodes fabricated by a conventional thermal diffusion process of Ag acceptor. The Au/Ag/n -Mg2Si (carrier concentration = 2 × 1015cm-3, resistivity = 5-10 Ωcm) substrate was annealed at 550 °C in the Ar-atmosphere using a rapid thermal annealing (RTA) furnace. The annealing periods were varied between 2 and 10 minutes. Clear rectifying behavior of J -V characteristics was observed for the diodes annealed for more than 2 minutes. Spectral responsivity from the photon energy threshold of approximately 0.6 eV was demonstrated with the Mg2Si pn -junction diodes under the zero bias condition at room temperature. The maximum intensity of spectral responsivity was increased with decrease the annealing period. The spectral responsivity of the diode with the RTA periods of 4 minutes was approximately 4 times higher than that of 10 minutes annealed one. (",

keywords = "Diode, Mg2Si, Pn-junction, Thermal diffusion",

author = "Masaaki Takezaki and Yusuke Yamanaka and Masahito Uchikoshi and Haruhiko Udono",

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T1 - Spectral characterization of Mg2Si pn -junction diode depending on RTA periods

AU - Takezaki, Masaaki

AU - Yamanaka, Yusuke

AU - Uchikoshi, Masahito

AU - Udono, Haruhiko

PY - 2013/12

Y1 - 2013/12

N2 - We have studied the effect of thermal annealing periods on the optoelectrical properties of Mg2Si pn -junction diodes fabricated by a conventional thermal diffusion process of Ag acceptor. The Au/Ag/n -Mg2Si (carrier concentration = 2 × 1015cm-3, resistivity = 5-10 Ωcm) substrate was annealed at 550 °C in the Ar-atmosphere using a rapid thermal annealing (RTA) furnace. The annealing periods were varied between 2 and 10 minutes. Clear rectifying behavior of J -V characteristics was observed for the diodes annealed for more than 2 minutes. Spectral responsivity from the photon energy threshold of approximately 0.6 eV was demonstrated with the Mg2Si pn -junction diodes under the zero bias condition at room temperature. The maximum intensity of spectral responsivity was increased with decrease the annealing period. The spectral responsivity of the diode with the RTA periods of 4 minutes was approximately 4 times higher than that of 10 minutes annealed one. (

AB - We have studied the effect of thermal annealing periods on the optoelectrical properties of Mg2Si pn -junction diodes fabricated by a conventional thermal diffusion process of Ag acceptor. The Au/Ag/n -Mg2Si (carrier concentration = 2 × 1015cm-3, resistivity = 5-10 Ωcm) substrate was annealed at 550 °C in the Ar-atmosphere using a rapid thermal annealing (RTA) furnace. The annealing periods were varied between 2 and 10 minutes. Clear rectifying behavior of J -V characteristics was observed for the diodes annealed for more than 2 minutes. Spectral responsivity from the photon energy threshold of approximately 0.6 eV was demonstrated with the Mg2Si pn -junction diodes under the zero bias condition at room temperature. The maximum intensity of spectral responsivity was increased with decrease the annealing period. The spectral responsivity of the diode with the RTA periods of 4 minutes was approximately 4 times higher than that of 10 minutes annealed one. (

KW - Diode

KW - Mg2Si

KW - Pn-junction

KW - Thermal diffusion

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Spectral characterization of Mg₂Si pn -junction diode depending on RTA periods

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Keywords

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