Spectral shape analysis of ultraviolet luminescence in n-type ZnO:Ga

T. Makino; Y. Segawa; S. Yoshida; A. Tsukazaki; A. Ohtomo; M. Kawasaki; H. Koinuma

doi:10.1063/1.2127167

Spectral shape analysis of ultraviolet luminescence in n-type ZnO:Ga

T. Makino, Y. Segawa, S. Yoshida, A. Tsukazaki, A. Ohtomo, M. Kawasaki, H. Koinuma

IMR - Materials Property Division

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

Thin films of laser molecular-beam epitaxy grown n -type Ga -doped ZnO were investigated with respect to their optical properties. Intense room-temperature photoluminescence (PL) in the near-band edge (NBE) region was observed. Moreover, its broadening of PL band was significantly larger than predicted by theoretical results modeled in terms of potential fluctuations caused by the random distribution of donor impurities. In addition, the line shape was rather asymmetrical. To explain these features of the NBE bands, a vibronic model was developed accounting for contributions from a series of phonon replicas.

Original language	English
Article number	093520
Journal	Journal of Applied Physics
Volume	98
Issue number	9
DOIs	https://doi.org/10.1063/1.2127167
Publication status	Published - 2005 Nov 1

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@article{5a103788c13049ae981ac70b6bacb3f1,

title = "Spectral shape analysis of ultraviolet luminescence in n-type ZnO:Ga",

abstract = "Thin films of laser molecular-beam epitaxy grown n -type Ga -doped ZnO were investigated with respect to their optical properties. Intense room-temperature photoluminescence (PL) in the near-band edge (NBE) region was observed. Moreover, its broadening of PL band was significantly larger than predicted by theoretical results modeled in terms of potential fluctuations caused by the random distribution of donor impurities. In addition, the line shape was rather asymmetrical. To explain these features of the NBE bands, a vibronic model was developed accounting for contributions from a series of phonon replicas.",

author = "T. Makino and Y. Segawa and S. Yoshida and A. Tsukazaki and A. Ohtomo and M. Kawasaki and H. Koinuma",

note = "Funding Information: One of the authors (T. M.) is thankful to K. Saito of the University of Tokyo, Japan for providing his simulation algorithm. This work was partially supported by MEXT Grant of Creative Scientific Research 14GS0204, the Asahi Glass Foundation, and the inter-university cooperative program of the IMR, Japan. ",

year = "2005",

month = nov,

day = "1",

doi = "10.1063/1.2127167",

language = "English",

volume = "98",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Spectral shape analysis of ultraviolet luminescence in n-type ZnO:Ga

AU - Makino, T.

AU - Segawa, Y.

AU - Yoshida, S.

AU - Tsukazaki, A.

AU - Ohtomo, A.

AU - Kawasaki, M.

AU - Koinuma, H.

N1 - Funding Information: One of the authors (T. M.) is thankful to K. Saito of the University of Tokyo, Japan for providing his simulation algorithm. This work was partially supported by MEXT Grant of Creative Scientific Research 14GS0204, the Asahi Glass Foundation, and the inter-university cooperative program of the IMR, Japan.

PY - 2005/11/1

Y1 - 2005/11/1

N2 - Thin films of laser molecular-beam epitaxy grown n -type Ga -doped ZnO were investigated with respect to their optical properties. Intense room-temperature photoluminescence (PL) in the near-band edge (NBE) region was observed. Moreover, its broadening of PL band was significantly larger than predicted by theoretical results modeled in terms of potential fluctuations caused by the random distribution of donor impurities. In addition, the line shape was rather asymmetrical. To explain these features of the NBE bands, a vibronic model was developed accounting for contributions from a series of phonon replicas.

AB - Thin films of laser molecular-beam epitaxy grown n -type Ga -doped ZnO were investigated with respect to their optical properties. Intense room-temperature photoluminescence (PL) in the near-band edge (NBE) region was observed. Moreover, its broadening of PL band was significantly larger than predicted by theoretical results modeled in terms of potential fluctuations caused by the random distribution of donor impurities. In addition, the line shape was rather asymmetrical. To explain these features of the NBE bands, a vibronic model was developed accounting for contributions from a series of phonon replicas.

UR - http://www.scopus.com/inward/record.url?scp=27844603946&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27844603946&partnerID=8YFLogxK

U2 - 10.1063/1.2127167

DO - 10.1063/1.2127167

M3 - Article

AN - SCOPUS:27844603946

SN - 0021-8979

VL - 98

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

M1 - 093520

ER -

Spectral shape analysis of ultraviolet luminescence in n-type ZnO:Ga

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