Spectroscopic observation of the interface states at the SiO2/4H-SiC(0001) interface

Yoshiyuki Yamashita; Takahiro Nagata; Toyohiro Chikyow; Ryu Hasunuma; Kikuo Yamabe

doi:10.1380/ejssnt.2019.56

Spectroscopic observation of the interface states at the SiO₂/4H-SiC(0001) interface

Yoshiyuki Yamashita, Takahiro Nagata, Toyohiro Chikyow, Ryu Hasunuma, Kikuo Yamabe

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We obtained the energy distribution of the interface states at the SiO₂/4H-SiC(0001) interface using operando hard x-ray photoelectron spectroscopy. Two types of interface states were observed: one with continuous interface states in the entire SiC band-gap and the other with sharp interface states formed below the conduction band minimum (CBM). The continuous interface states in the whole gap were attributed to carbon clusters while the sharp interface states observed near the CBM were due to the Si₂−C=O state and/or the Si₂−C=C−Si₂ state at the SiO₂/SiC interface.

Original language	English
Pages (from-to)	56-60
Number of pages	5
Journal	e-Journal of Surface Science and Nanotechnology
Volume	17
DOIs	https://doi.org/10.1380/ejssnt.2019.56
Publication status	Published - 2019 Jul 4

Keywords

Semiconductor-insulator interfaces
Silicon carbide
Synchrotron radiation photoelectron spectroscopy

ASJC Scopus subject areas

Biotechnology
Bioengineering
Condensed Matter Physics
Mechanics of Materials
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1380/ejssnt.2019.56

Cite this

@article{09e5d1c7ac8148bab15a45a8e2e7e1e0,

title = "Spectroscopic observation of the interface states at the SiO2/4H-SiC(0001) interface",

abstract = "We obtained the energy distribution of the interface states at the SiO2/4H-SiC(0001) interface using operando hard x-ray photoelectron spectroscopy. Two types of interface states were observed: one with continuous interface states in the entire SiC band-gap and the other with sharp interface states formed below the conduction band minimum (CBM). The continuous interface states in the whole gap were attributed to carbon clusters while the sharp interface states observed near the CBM were due to the Si2−C=O state and/or the Si2−C=C−Si2 state at the SiO2/SiC interface.",

keywords = "Semiconductor-insulator interfaces, Silicon carbide, Synchrotron radiation photoelectron spectroscopy",

author = "Yoshiyuki Yamashita and Takahiro Nagata and Toyohiro Chikyow and Ryu Hasunuma and Kikuo Yamabe",

note = "Funding Information: This work is supported in part by a Grant-in-Aid for Scientific Research on Priority Areas, (Grant Nos. 17069006 and 23560033), from the Ministry of Education, Culture, Sports, Science and Technology of Japan. The authors are grateful to HiSOR, Hiroshima University and JAEA/SPring-8 for the development of HX-PES in BL15XU at SPring-8. Publisher Copyright: {\textcopyright} 2019 The Japan Society of Vacuum and Surface Science. All rights reserved.",

year = "2019",

month = jul,

day = "4",

doi = "10.1380/ejssnt.2019.56",

language = "English",

volume = "17",

pages = "56--60",

journal = "e-Journal of Surface Science and Nanotechnology",

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publisher = "Surface Science Society of Japan",

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T1 - Spectroscopic observation of the interface states at the SiO2/4H-SiC(0001) interface

AU - Yamashita, Yoshiyuki

AU - Nagata, Takahiro

AU - Chikyow, Toyohiro

AU - Hasunuma, Ryu

AU - Yamabe, Kikuo

N1 - Funding Information: This work is supported in part by a Grant-in-Aid for Scientific Research on Priority Areas, (Grant Nos. 17069006 and 23560033), from the Ministry of Education, Culture, Sports, Science and Technology of Japan. The authors are grateful to HiSOR, Hiroshima University and JAEA/SPring-8 for the development of HX-PES in BL15XU at SPring-8. Publisher Copyright: © 2019 The Japan Society of Vacuum and Surface Science. All rights reserved.

PY - 2019/7/4

Y1 - 2019/7/4

N2 - We obtained the energy distribution of the interface states at the SiO2/4H-SiC(0001) interface using operando hard x-ray photoelectron spectroscopy. Two types of interface states were observed: one with continuous interface states in the entire SiC band-gap and the other with sharp interface states formed below the conduction band minimum (CBM). The continuous interface states in the whole gap were attributed to carbon clusters while the sharp interface states observed near the CBM were due to the Si2−C=O state and/or the Si2−C=C−Si2 state at the SiO2/SiC interface.

AB - We obtained the energy distribution of the interface states at the SiO2/4H-SiC(0001) interface using operando hard x-ray photoelectron spectroscopy. Two types of interface states were observed: one with continuous interface states in the entire SiC band-gap and the other with sharp interface states formed below the conduction band minimum (CBM). The continuous interface states in the whole gap were attributed to carbon clusters while the sharp interface states observed near the CBM were due to the Si2−C=O state and/or the Si2−C=C−Si2 state at the SiO2/SiC interface.

KW - Semiconductor-insulator interfaces

KW - Silicon carbide

KW - Synchrotron radiation photoelectron spectroscopy

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