TY - JOUR
T1 - Spectroscopic study on ultrafast carrier dynamics and terahertz amplified stimulated emission in optically pumped graphene
AU - Otsuji, Taiichi
AU - Boubanga-Tombet, Stephane
AU - Satou, Akira
AU - Suemitsu, Maki
AU - Ryzhii, Victor
N1 - Funding Information:
Acknowledgements The authors thank H. Karasawa, T. Watanabe, S. Chan, and T. Fukushima at Tohoku University, Japan, for their contribution on the experimental works. They also thank M. Ryzhii at University of Aizu, Japan, and V. Mitin at University at Buffalo, SUNY, USA, for their theoretical support, and J. Kono at Rice University, USA, for his valuable discussion. This work is financially supported by JST-CREST, Japan, JSPS Grant-in-Aid for Specially Promoting Research, JSPS Core-to-Core Programs, Japan, and the NSF-PIRE Teranano Nano-Japan Program, USA.
PY - 2012/8
Y1 - 2012/8
N2 - This paper reviews recent advances in spectroscopic study on ultrafast carrier dynamics and terahertz (THz) stimulated emission in optically pumped graphene. The gapless and linear energy spectra of electrons and holes in graphene can lead to nontrivial features such as negative dynamic conductivity in the THz spectral range, which may lead to the development of new types of THz lasers. First, the non-equilibrium carrier relaxation/ recombination dynamics is formulated to show how photoexcited carriers equilibrate their energy and temperature via carrier-carrier and carrier-phonon scatterings and in what photon energies and in what time duration the dynamic conductivity can take negative values as functions of temperature, pumping photon energy/intensity, and carrier relaxation rates. Second, we conduct time-domain spectroscopic studies using an optical pump and a terahertz probe with an optical probe technique at room temperature and show that graphene sheets amplify an incoming terahertz field. Two different types of samples are prepared for the measurement; one is an exfoliated monolayer graphene on SiO2/Si substrate and the other is a heteroepitaxially grown non-Bernal stacked multilayer graphene on a 3C-SiC/Si epi-wafer.
AB - This paper reviews recent advances in spectroscopic study on ultrafast carrier dynamics and terahertz (THz) stimulated emission in optically pumped graphene. The gapless and linear energy spectra of electrons and holes in graphene can lead to nontrivial features such as negative dynamic conductivity in the THz spectral range, which may lead to the development of new types of THz lasers. First, the non-equilibrium carrier relaxation/ recombination dynamics is formulated to show how photoexcited carriers equilibrate their energy and temperature via carrier-carrier and carrier-phonon scatterings and in what photon energies and in what time duration the dynamic conductivity can take negative values as functions of temperature, pumping photon energy/intensity, and carrier relaxation rates. Second, we conduct time-domain spectroscopic studies using an optical pump and a terahertz probe with an optical probe technique at room temperature and show that graphene sheets amplify an incoming terahertz field. Two different types of samples are prepared for the measurement; one is an exfoliated monolayer graphene on SiO2/Si substrate and the other is a heteroepitaxially grown non-Bernal stacked multilayer graphene on a 3C-SiC/Si epi-wafer.
KW - Graphene
KW - Population inversion
KW - Stimulated emission
KW - Terahertz
KW - Ultrafast carrier dynamics
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U2 - 10.1007/s10762-012-9908-8
DO - 10.1007/s10762-012-9908-8
M3 - Article
AN - SCOPUS:84863726165
SN - 1866-6892
VL - 33
SP - 825
EP - 838
JO - Journal of Infrared, Millimeter, and Terahertz Waves
JF - Journal of Infrared, Millimeter, and Terahertz Waves
IS - 8
ER -