Spherical φ 1mm SAW device based on ball semiconductor/MEMS technology

Dongyoun Sim; Akio Mizukami; Shingo Akao; Ichitaro Satoh; Maxey Bryan; Nobuo Takeda; Tuneo Ohgi; Noritaka Nakaso; Tetsusya Miyagishi; Hidekazu Tanaka; Ken Fukiura; Hirohiko Kazato; Hideyuki Watanabe; Tsuyoshi Mihara; Kazushi Yamanaka

Spherical φ 1mm SAW device based on ball semiconductor/MEMS technology

Dongyoun Sim, Akio Mizukami, Shingo Akao, Ichitaro Satoh, Maxey Bryan, Nobuo Takeda, Tuneo Ohgi, Noritaka Nakaso, Tetsusya Miyagishi, Hidekazu Tanaka, Ken Fukiura, Hirohiko Kazato, Hideyuki Watanabe, Tsuyoshi Mihara, Kazushi Yamanaka

Research output: Contribution to journal › Conference article › peer-review

9 Citations (Scopus)

Abstract

Ball SAW(surface acoustic wave) device was fabricated on a spherical φ 1 mm single crystal quartz. On Z-axis cylinder, it has multiple roundtrips of more than 190 turns and a long propagation length of 157[mm] at 150[MHz] of driving frequency and 50^th turns roundtrip. Using this device, we realized a hydrogen gas sensor as an application of Ball SAW device. Amplitude and delay time responses were measured under exposure to 10ppm to 3% H2 in N₂ base gas by using a selective sensing film of 40nm thick Pd/Ni alloy. The response time was about 30 sec in 3% H2.

Original language	English
Pages (from-to)	918-921
Number of pages	4
Journal	Proceedings - IEEE Ultrasonics Symposium
Volume	2
Publication status	Published - 2004 Dec 1
Event	2004 IEEE Ultrasonics Symposium - Montreal, Que., Canada Duration: 2004 Aug 23 → 2004 Aug 27

ASJC Scopus subject areas

Acoustics and Ultrasonics

Cite this

@article{aa436e49ee8b4fc8914f979fb1c6af1e,

title = "Spherical φ 1mm SAW device based on ball semiconductor/MEMS technology",

abstract = "Ball SAW(surface acoustic wave) device was fabricated on a spherical φ 1 mm single crystal quartz. On Z-axis cylinder, it has multiple roundtrips of more than 190 turns and a long propagation length of 157[mm] at 150[MHz] of driving frequency and 50th turns roundtrip. Using this device, we realized a hydrogen gas sensor as an application of Ball SAW device. Amplitude and delay time responses were measured under exposure to 10ppm to 3% H2 in N2 base gas by using a selective sensing film of 40nm thick Pd/Ni alloy. The response time was about 30 sec in 3% H2.",

author = "Dongyoun Sim and Akio Mizukami and Shingo Akao and Ichitaro Satoh and Maxey Bryan and Nobuo Takeda and Tuneo Ohgi and Noritaka Nakaso and Tetsusya Miyagishi and Hidekazu Tanaka and Ken Fukiura and Hirohiko Kazato and Hideyuki Watanabe and Tsuyoshi Mihara and Kazushi Yamanaka",

year = "2004",

month = dec,

day = "1",

language = "English",

volume = "2",

pages = "918--921",

journal = "Proceedings - IEEE Ultrasonics Symposium",

issn = "1051-0117",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 IEEE Ultrasonics Symposium ; Conference date: 23-08-2004 Through 27-08-2004",

}

TY - JOUR

T1 - Spherical φ 1mm SAW device based on ball semiconductor/MEMS technology

AU - Sim, Dongyoun

AU - Mizukami, Akio

AU - Akao, Shingo

AU - Satoh, Ichitaro

AU - Bryan, Maxey

AU - Takeda, Nobuo

AU - Ohgi, Tuneo

AU - Nakaso, Noritaka

AU - Miyagishi, Tetsusya

AU - Tanaka, Hidekazu

AU - Fukiura, Ken

AU - Kazato, Hirohiko

AU - Watanabe, Hideyuki

AU - Mihara, Tsuyoshi

AU - Yamanaka, Kazushi

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Ball SAW(surface acoustic wave) device was fabricated on a spherical φ 1 mm single crystal quartz. On Z-axis cylinder, it has multiple roundtrips of more than 190 turns and a long propagation length of 157[mm] at 150[MHz] of driving frequency and 50th turns roundtrip. Using this device, we realized a hydrogen gas sensor as an application of Ball SAW device. Amplitude and delay time responses were measured under exposure to 10ppm to 3% H2 in N2 base gas by using a selective sensing film of 40nm thick Pd/Ni alloy. The response time was about 30 sec in 3% H2.

AB - Ball SAW(surface acoustic wave) device was fabricated on a spherical φ 1 mm single crystal quartz. On Z-axis cylinder, it has multiple roundtrips of more than 190 turns and a long propagation length of 157[mm] at 150[MHz] of driving frequency and 50th turns roundtrip. Using this device, we realized a hydrogen gas sensor as an application of Ball SAW device. Amplitude and delay time responses were measured under exposure to 10ppm to 3% H2 in N2 base gas by using a selective sensing film of 40nm thick Pd/Ni alloy. The response time was about 30 sec in 3% H2.

UR - http://www.scopus.com/inward/record.url?scp=21644453766&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21644453766&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:21644453766

SN - 1051-0117

VL - 2

SP - 918

EP - 921

JO - Proceedings - IEEE Ultrasonics Symposium

JF - Proceedings - IEEE Ultrasonics Symposium

T2 - 2004 IEEE Ultrasonics Symposium

Y2 - 23 August 2004 through 27 August 2004

ER -

Spherical φ 1mm SAW device based on ball semiconductor/MEMS technology

Abstract

ASJC Scopus subject areas

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