TY - JOUR
T1 - Spin accumulation and decay in magnetic Schottky barriers
AU - Bauer, Gerrit E.W.
AU - Tserkovnyak, Yaroslav
AU - Brataas, Arne
AU - Ren, Jun
AU - Xia, Ke
AU - Zwierzycki, Maciej
AU - Kelly, Paul J.
PY - 2005/10/15
Y1 - 2005/10/15
N2 - The theory of charge and spin transport in forward-biased Schottky barriers reveals characteristic and experimentally relevant features. The conductivity mismatch is found to enhance the current-induced spin imbalance in the semiconductor. The GaAs MnAs interface resistance is obtained from an analysis of the magnetic-field-dependent Kerr rotation experiments by Stephens and compared with first-principles calculations for intrinsic interfaces. With increasing current bias, the interface transparency grows toward the theoretical values, reflecting increasingly efficient Schottky barrier screening.
AB - The theory of charge and spin transport in forward-biased Schottky barriers reveals characteristic and experimentally relevant features. The conductivity mismatch is found to enhance the current-induced spin imbalance in the semiconductor. The GaAs MnAs interface resistance is obtained from an analysis of the magnetic-field-dependent Kerr rotation experiments by Stephens and compared with first-principles calculations for intrinsic interfaces. With increasing current bias, the interface transparency grows toward the theoretical values, reflecting increasingly efficient Schottky barrier screening.
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U2 - 10.1103/PhysRevB.72.155304
DO - 10.1103/PhysRevB.72.155304
M3 - Article
AN - SCOPUS:29644441133
SN - 1098-0121
VL - 72
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 15
M1 - 155304
ER -