The theory of charge and spin transport in forward-biased Schottky barriers reveals characteristic and experimentally relevant features. The conductivity mismatch is found to enhance the current-induced spin imbalance in the semiconductor. The GaAs MnAs interface resistance is obtained from an analysis of the magnetic-field-dependent Kerr rotation experiments by Stephens and compared with first-principles calculations for intrinsic interfaces. With increasing current bias, the interface transparency grows toward the theoretical values, reflecting increasingly efficient Schottky barrier screening.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2005 Oct 15|