Spin accumulation in Cr nanoparticles in single electron tunneling regime

Tetsunori Koda; Seiji Mitani; Masaki Mizuguchi; Koki Takanashi

doi:10.1109/TMAG.2010.2044870

Spin accumulation in Cr nanoparticles in single electron tunneling regime

Tetsunori Koda, Seiji Mitani, Masaki Mizuguchi, Koki Takanashi

Materials Development Division

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We have studied spin-dependent single electron tunneling in Cr nanoparticles with a diameter of 4 nm using Fe/MgO/Cr-nanoparticles/MgO/Fe double tunnel junctions. The transport properties are governed by the Coulomb blockade, showing suppression of current at low bias voltages. Magnetoresistance is clearly observed at a bias voltage over 0.25 V, and the magnetoresistance ratio increases with increasing bias voltage. These results suggest that the magnetoresistance is due to the spin accumulation in Cr nanoparticles. With some assumption, the minimum value of spin relaxation time in Cr nanoparticles is roughly estimated to be on the order of tens of nanoseconds.

Original language	English
Article number	5467577
Pages (from-to)	2060-2062
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	46
Issue number	6
DOIs	https://doi.org/10.1109/TMAG.2010.2044870
Publication status	Published - 2010 Jun

Keywords

Cr nanoparticles
Spin accumulation
Spin relaxation time
Spin-dependent single electron tunneling

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2010.2044870

Cite this

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title = "Spin accumulation in Cr nanoparticles in single electron tunneling regime",

abstract = "We have studied spin-dependent single electron tunneling in Cr nanoparticles with a diameter of 4 nm using Fe/MgO/Cr-nanoparticles/MgO/Fe double tunnel junctions. The transport properties are governed by the Coulomb blockade, showing suppression of current at low bias voltages. Magnetoresistance is clearly observed at a bias voltage over 0.25 V, and the magnetoresistance ratio increases with increasing bias voltage. These results suggest that the magnetoresistance is due to the spin accumulation in Cr nanoparticles. With some assumption, the minimum value of spin relaxation time in Cr nanoparticles is roughly estimated to be on the order of tens of nanoseconds.",

keywords = "Cr nanoparticles, Spin accumulation, Spin relaxation time, Spin-dependent single electron tunneling",

author = "Tetsunori Koda and Seiji Mitani and Masaki Mizuguchi and Koki Takanashi",

note = "Funding Information: This work was supported in part by a Grant-in-Aid for Scientific Research in Priority Area “Creation and control of spin current” and by a grant from the for Global COE program “Materials Integration International Center of Education Research” from the Ministry of Education, Culture, Sports, Science and Technology, Japan.",

year = "2010",

month = jun,

doi = "10.1109/TMAG.2010.2044870",

language = "English",

volume = "46",

pages = "2060--2062",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

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T1 - Spin accumulation in Cr nanoparticles in single electron tunneling regime

AU - Koda, Tetsunori

AU - Mitani, Seiji

AU - Mizuguchi, Masaki

AU - Takanashi, Koki

N1 - Funding Information: This work was supported in part by a Grant-in-Aid for Scientific Research in Priority Area “Creation and control of spin current” and by a grant from the for Global COE program “Materials Integration International Center of Education Research” from the Ministry of Education, Culture, Sports, Science and Technology, Japan.

PY - 2010/6

Y1 - 2010/6

N2 - We have studied spin-dependent single electron tunneling in Cr nanoparticles with a diameter of 4 nm using Fe/MgO/Cr-nanoparticles/MgO/Fe double tunnel junctions. The transport properties are governed by the Coulomb blockade, showing suppression of current at low bias voltages. Magnetoresistance is clearly observed at a bias voltage over 0.25 V, and the magnetoresistance ratio increases with increasing bias voltage. These results suggest that the magnetoresistance is due to the spin accumulation in Cr nanoparticles. With some assumption, the minimum value of spin relaxation time in Cr nanoparticles is roughly estimated to be on the order of tens of nanoseconds.

AB - We have studied spin-dependent single electron tunneling in Cr nanoparticles with a diameter of 4 nm using Fe/MgO/Cr-nanoparticles/MgO/Fe double tunnel junctions. The transport properties are governed by the Coulomb blockade, showing suppression of current at low bias voltages. Magnetoresistance is clearly observed at a bias voltage over 0.25 V, and the magnetoresistance ratio increases with increasing bias voltage. These results suggest that the magnetoresistance is due to the spin accumulation in Cr nanoparticles. With some assumption, the minimum value of spin relaxation time in Cr nanoparticles is roughly estimated to be on the order of tens of nanoseconds.

KW - Cr nanoparticles

KW - Spin accumulation

KW - Spin relaxation time

KW - Spin-dependent single electron tunneling

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DO - 10.1109/TMAG.2010.2044870

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JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 6

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Spin accumulation in Cr nanoparticles in single electron tunneling regime

Abstract

Keywords

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