Spin and valley polarization dependence of resistivity in two dimensions

K. Takashina, Y. Niida, V. T. Renard, B. A. Piot, D. S.D. Tregurtha, A. Fujiwara, Y. Hirayama

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


We demonstrate that spin polarization and valley polarization have quantitatively similar effects on the resistivity of a two-dimensional electron gas in a silicon-on-insulator quantum well. In so doing, we also examine the dependence on disorder, leading to a coarse but global phenomenology of how the resistivity depends on its key parameters: spin and valley polarization, density, disorder, and temperature.

Original languageEnglish
Article number201301
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number20
Publication statusPublished - 2013 Nov 4

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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