TY - JOUR
T1 - Spin and valley polarization dependence of resistivity in two dimensions
AU - Takashina, K.
AU - Niida, Y.
AU - Renard, V. T.
AU - Piot, B. A.
AU - Tregurtha, D. S.D.
AU - Fujiwara, A.
AU - Hirayama, Y.
PY - 2013/11/4
Y1 - 2013/11/4
N2 - We demonstrate that spin polarization and valley polarization have quantitatively similar effects on the resistivity of a two-dimensional electron gas in a silicon-on-insulator quantum well. In so doing, we also examine the dependence on disorder, leading to a coarse but global phenomenology of how the resistivity depends on its key parameters: spin and valley polarization, density, disorder, and temperature.
AB - We demonstrate that spin polarization and valley polarization have quantitatively similar effects on the resistivity of a two-dimensional electron gas in a silicon-on-insulator quantum well. In so doing, we also examine the dependence on disorder, leading to a coarse but global phenomenology of how the resistivity depends on its key parameters: spin and valley polarization, density, disorder, and temperature.
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U2 - 10.1103/PhysRevB.88.201301
DO - 10.1103/PhysRevB.88.201301
M3 - Article
AN - SCOPUS:84887533349
SN - 0163-1829
VL - 88
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 20
M1 - 201301
ER -