TY - JOUR
T1 - Spin conserved electron transport behaviors in fullerenes (C60 and C70) spin valves
AU - Zhang, Xianmin
AU - Ai, Xiaowei
AU - Zhang, Runxin
AU - Ma, Qinli
AU - Wang, Zhongchang
AU - Qin, Gaowu
AU - Wang, Jiwei
AU - Wang, Shouguo
AU - Suzuki, Kazuya
AU - Miyazaki, Terunobu
AU - Mizukami, Shigemi
N1 - Funding Information:
This work was supported by the National Natural Science Foundation of China (No. 51471046 , 11274150 , 51431009 , 51525101 ), the basic research project of Key Laboratory of Liaoning Provincial Education Department (No. LZ2015039 ), the Fundamental Research Funds for the Central Universities (No. L1502021 , N151004002 ), the Startup Foundation for Talents from Northeastern University , and the Changjiang Scholars and Innovative Research Team in University (No. IRT0713 ).
Publisher Copyright:
© 2016 Published by Elsevier Ltd.
PY - 2016/9/1
Y1 - 2016/9/1
N2 - Fullerenes (C60 and C70) films have been fabricated by a thermal evaporation method. Raman spectra for C60 and C70 films were utilized to evaluate the film quality, and atomic force microscopy technique showed the roughness of both films was within the molecular scale of fullerenes. Moreover, these fullerenes (C60 and C70) films were successfully used to fabricate spin-valve devices with an Fe3O4/AlO/fullerenes (C60 or C70)/Co/Al stacking structure to get an insight for spin conserved electron transport behaviors in C60 and C70 films. The magnetoresistance (MR) effects in these devices were investigated at both room and low temperatures. As reducing measurement temperature, the MR ratios increased in both fullerenes (C60 and C70) based devices due to the reduction of spin scattering. It is worth noting that the MR ratio in C60 based devices is around one order of magnitude larger than that of C70 based devices at room temperature. The dominant reason for the larger MR ratio in C60 based spin valves compared to that in C70 based devices is analyzed. This study may provide some criteria for organic semiconductors selection for designing spin based organic devices.
AB - Fullerenes (C60 and C70) films have been fabricated by a thermal evaporation method. Raman spectra for C60 and C70 films were utilized to evaluate the film quality, and atomic force microscopy technique showed the roughness of both films was within the molecular scale of fullerenes. Moreover, these fullerenes (C60 and C70) films were successfully used to fabricate spin-valve devices with an Fe3O4/AlO/fullerenes (C60 or C70)/Co/Al stacking structure to get an insight for spin conserved electron transport behaviors in C60 and C70 films. The magnetoresistance (MR) effects in these devices were investigated at both room and low temperatures. As reducing measurement temperature, the MR ratios increased in both fullerenes (C60 and C70) based devices due to the reduction of spin scattering. It is worth noting that the MR ratio in C60 based devices is around one order of magnitude larger than that of C70 based devices at room temperature. The dominant reason for the larger MR ratio in C60 based spin valves compared to that in C70 based devices is analyzed. This study may provide some criteria for organic semiconductors selection for designing spin based organic devices.
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U2 - 10.1016/j.carbon.2016.05.011
DO - 10.1016/j.carbon.2016.05.011
M3 - Article
AN - SCOPUS:84969213659
SN - 0008-6223
VL - 106
SP - 202
EP - 207
JO - Carbon
JF - Carbon
ER -