Spin-dependent inelastic electron tunneling spectroscopy of magnetic tunnel junctions

Masamitsu Hayashi, Yasuo Ando, Mikihiko Oogane, Hitoshi Kubota, Terunobu Miyazaki

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4 Citations (Scopus)


We investigated the nature of spin dependent scattering by employing inelastic electron tunneling spectroscopy in magnetic tunnel junctions. In this work we introduced a comparable quantity represented as (d2V/dI 2)/(dV/dI) by simultaneous measurements of the dV/dI and d 2V/dI2 curves. In each junction we measured, a zero bias anomaly was observed close to the Fermi energy (±2 mV). Furthermore, a relatively large spin dependent scattering occurred around ±18 mV. These peaks and zero bias anomalies were the primary cause of the drop of the tunneling magnetoresistance (TMR) ratio as the bias voltage was applied. Furthermore, insertion of a normal metal between the insulator and ferromagnetic metal was examined. Silver exhibited a reduction of spin dependent scattering, while excess aluminum induced a large zero bias anomaly.

Original languageEnglish
Pages (from-to)7472-7476
Number of pages5
JournalJapanese Journal of Applied Physics
Issue number11 A
Publication statusPublished - 2004 Nov


  • Inelastic electron tunneling spectroscopy
  • Magnetic tunnel junction
  • Magnon
  • Spin-dependent tunneling
  • Tunnel magnetoresistance


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