TY - JOUR
T1 - Spin-dependent phenomena in ferromagnetic/nonmagnetic III-V heterostructures
AU - Ohno, Hideo
AU - Matsukura, Fumihiro
AU - Ohno, Yuzo
N1 - Funding Information:
The authors thank T. Dietl, I. Arata, E. Abe, D. Chiba, D.K. Young, B. Beschoten and D.D. Awschalom for collaboration and fruitful discussion. The work at Tohoku University was supported partly by the ‘Research for the Future’ Program (No. JSPS-RFTF97P00202) from the Japan Society for the Promotion of Science and by Grant-in-Aids (#09244193 and #12305001) from the Ministry of Education, Culture, Sports, Science and Technology, Japan.
PY - 2001/7/25
Y1 - 2001/7/25
N2 - III-V ferromagnetic semiconductors allow epitaxial integration of ferromagnetism with nonmagnetic semiconductor heterostructures and offer opportunities to explore properties that combine conventional semiconductor physics with magnetic cooperative phenomena. Here, we review spin-dependent phenomena observed in III-V-based ferromagnetic semiconductor heterostructures, which include spin-dependent scattering, tunnel magnetoresistance, resonant tunneling with ferromagnetic emitter, spin injection, and electric field control of ferromagnetism.
AB - III-V ferromagnetic semiconductors allow epitaxial integration of ferromagnetism with nonmagnetic semiconductor heterostructures and offer opportunities to explore properties that combine conventional semiconductor physics with magnetic cooperative phenomena. Here, we review spin-dependent phenomena observed in III-V-based ferromagnetic semiconductor heterostructures, which include spin-dependent scattering, tunnel magnetoresistance, resonant tunneling with ferromagnetic emitter, spin injection, and electric field control of ferromagnetism.
KW - A. Heterojunctions
KW - D. Electronic transport
KW - D. Galvanomagnetic effects
KW - D. Tunneling
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U2 - 10.1016/S0038-1098(01)00175-2
DO - 10.1016/S0038-1098(01)00175-2
M3 - Article
AN - SCOPUS:0035948727
SN - 0038-1098
VL - 119
SP - 281
EP - 289
JO - Solid State Communications
JF - Solid State Communications
IS - 4-5
ER -