Spin-dependent phenomena in ferromagnetic/nonmagnetic III-V heterostructures

Hideo Ohno, Fumihiro Matsukura, Yuzo Ohno

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)


III-V ferromagnetic semiconductors allow epitaxial integration of ferromagnetism with nonmagnetic semiconductor heterostructures and offer opportunities to explore properties that combine conventional semiconductor physics with magnetic cooperative phenomena. Here, we review spin-dependent phenomena observed in III-V-based ferromagnetic semiconductor heterostructures, which include spin-dependent scattering, tunnel magnetoresistance, resonant tunneling with ferromagnetic emitter, spin injection, and electric field control of ferromagnetism.

Original languageEnglish
Pages (from-to)281-289
Number of pages9
JournalSolid State Communications
Issue number4-5
Publication statusPublished - 2001 Jul 25


  • A. Heterojunctions
  • D. Electronic transport
  • D. Galvanomagnetic effects
  • D. Tunneling


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