Spin-dependent properties of ferromagnetic/nonmagnetic GaAs heterostructures

Hideo Ohno, Fumihiro Matsukura, Yuzo Ohno

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


We review recent studies on spin-dependent properties of structures made of ferromagnetic GaAs, (Ga,Mn)As, aimed to lay the ground for semiconductor spin-electronics (spintronics). Introduction of magnetic ion, Mn, in GaAs leads to hole-induced ferromagnetism, the origin of which is explained in terms of a mean-field theory. Due to exchange interaction between spins of carriers and localized magnetic electrons, spin-splitting of the semiconductor bands takes place when ferromagnetism sets in, and carriers become spin polarized. This spontaneous spin polarization leads to spin-dependent scattering and tunnel magnetoresistance in semiconducting structures. Electrical spin injection across a ferromagnetic/nonmagnetic semiconductor heterojunction and into an InGaAs quantum well is also demonstrated using the spin polarized carriers in ferromagnetic (Ga,Mn)As.

Original languageEnglish
Pages (from-to)70-74
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number1-2
Publication statusPublished - 2001 Jun 5


  • Ferromagnetic GaAs
  • Spin-dependent properties
  • Spintronics


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