TY - JOUR
T1 - Spin-dependent properties of ferromagnetic/nonmagnetic GaAs heterostructures
AU - Ohno, Hideo
AU - Matsukura, Fumihiro
AU - Ohno, Yuzo
N1 - Funding Information:
The authors thank T. Dietl and D. D. Awschalom for illuminating discussion and fruitful collaboration, and D. Chiba and N. Akiba for experimental work and discussion. The electrical spin-injection work is a result of collaborative work with D. D. Awschalom and his team at University of California, Santa Barbara. The work at Tohoku University was supported in part by the ‘Research for the Future’ Program (no. JSPS-RFTF97P00202) from the Japan Society for the Promotion of Science and by Grant-in-Aids (no. 09244103 and no. 12305001) from the Ministry of Education, Science, Sport, and Culture, Japan.
PY - 2001/6/5
Y1 - 2001/6/5
N2 - We review recent studies on spin-dependent properties of structures made of ferromagnetic GaAs, (Ga,Mn)As, aimed to lay the ground for semiconductor spin-electronics (spintronics). Introduction of magnetic ion, Mn, in GaAs leads to hole-induced ferromagnetism, the origin of which is explained in terms of a mean-field theory. Due to exchange interaction between spins of carriers and localized magnetic electrons, spin-splitting of the semiconductor bands takes place when ferromagnetism sets in, and carriers become spin polarized. This spontaneous spin polarization leads to spin-dependent scattering and tunnel magnetoresistance in semiconducting structures. Electrical spin injection across a ferromagnetic/nonmagnetic semiconductor heterojunction and into an InGaAs quantum well is also demonstrated using the spin polarized carriers in ferromagnetic (Ga,Mn)As.
AB - We review recent studies on spin-dependent properties of structures made of ferromagnetic GaAs, (Ga,Mn)As, aimed to lay the ground for semiconductor spin-electronics (spintronics). Introduction of magnetic ion, Mn, in GaAs leads to hole-induced ferromagnetism, the origin of which is explained in terms of a mean-field theory. Due to exchange interaction between spins of carriers and localized magnetic electrons, spin-splitting of the semiconductor bands takes place when ferromagnetism sets in, and carriers become spin polarized. This spontaneous spin polarization leads to spin-dependent scattering and tunnel magnetoresistance in semiconducting structures. Electrical spin injection across a ferromagnetic/nonmagnetic semiconductor heterojunction and into an InGaAs quantum well is also demonstrated using the spin polarized carriers in ferromagnetic (Ga,Mn)As.
KW - Ferromagnetic GaAs
KW - Spin-dependent properties
KW - Spintronics
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U2 - 10.1016/S0921-5107(01)00572-4
DO - 10.1016/S0921-5107(01)00572-4
M3 - Article
AN - SCOPUS:0035811129
SN - 0921-5107
VL - 84
SP - 70
EP - 74
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
IS - 1-2
ER -