Spin-dependent tunneling through NiFe nanoparticles

K. J. Dempsey; A. T. Hindmarch; C. H. Marrows; H. X. Wei; Q. H. Qin; Z. C. Wen; X. F. Han

doi:10.1063/1.3072721

Spin-dependent tunneling through NiFe nanoparticles

K. J. Dempsey, A. T. Hindmarch, C. H. Marrows, H. X. Wei, Q. H. Qin, Z. C. Wen, X. F. Han

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Double magnetic tunnel junctions (DMTJs) have been fabricated using alumina barriers with NiFe particles (∼1.8 nm) embedded within. The junctions exhibit spin-dependent transport properties and Coulomb blockade effects. We study differences between control samples and the DMTJs; specifically I-V characteristics and tunnel magnetoresistance (TMR) versus bias voltage characteristics. Clear differences in the systems are evident: the DMTJ with NiFe particles shows a marked peak in TMR at low bias, whereas the dependence of TMR on bias is much weaker for the control MTJ without embedded particles. Hence the TMR at low bias is enhanced by the Coulomb blockade effects.

Original language	English
Article number	07C923
Journal	Journal of Applied Physics
Volume	105
Issue number	7
DOIs	https://doi.org/10.1063/1.3072721
Publication status	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.3072721

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title = "Spin-dependent tunneling through NiFe nanoparticles",

abstract = "Double magnetic tunnel junctions (DMTJs) have been fabricated using alumina barriers with NiFe particles (∼1.8 nm) embedded within. The junctions exhibit spin-dependent transport properties and Coulomb blockade effects. We study differences between control samples and the DMTJs; specifically I-V characteristics and tunnel magnetoresistance (TMR) versus bias voltage characteristics. Clear differences in the systems are evident: the DMTJ with NiFe particles shows a marked peak in TMR at low bias, whereas the dependence of TMR on bias is much weaker for the control MTJ without embedded particles. Hence the TMR at low bias is enhanced by the Coulomb blockade effects.",

author = "Dempsey, {K. J.} and Hindmarch, {A. T.} and Marrows, {C. H.} and Wei, {H. X.} and Qin, {Q. H.} and Wen, {Z. C.} and Han, {X. F.}",

note = "Funding Information: We would like to acknowledge support from the EPSRC (Grant No. EP/E016413/1) and Royal Society (UK), and National Science Foundation of China.",

year = "2009",

doi = "10.1063/1.3072721",

language = "English",

volume = "105",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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TY - JOUR

T1 - Spin-dependent tunneling through NiFe nanoparticles

AU - Dempsey, K. J.

AU - Hindmarch, A. T.

AU - Marrows, C. H.

AU - Wei, H. X.

AU - Qin, Q. H.

AU - Wen, Z. C.

AU - Han, X. F.

N1 - Funding Information: We would like to acknowledge support from the EPSRC (Grant No. EP/E016413/1) and Royal Society (UK), and National Science Foundation of China.

PY - 2009

Y1 - 2009

N2 - Double magnetic tunnel junctions (DMTJs) have been fabricated using alumina barriers with NiFe particles (∼1.8 nm) embedded within. The junctions exhibit spin-dependent transport properties and Coulomb blockade effects. We study differences between control samples and the DMTJs; specifically I-V characteristics and tunnel magnetoresistance (TMR) versus bias voltage characteristics. Clear differences in the systems are evident: the DMTJ with NiFe particles shows a marked peak in TMR at low bias, whereas the dependence of TMR on bias is much weaker for the control MTJ without embedded particles. Hence the TMR at low bias is enhanced by the Coulomb blockade effects.

AB - Double magnetic tunnel junctions (DMTJs) have been fabricated using alumina barriers with NiFe particles (∼1.8 nm) embedded within. The junctions exhibit spin-dependent transport properties and Coulomb blockade effects. We study differences between control samples and the DMTJs; specifically I-V characteristics and tunnel magnetoresistance (TMR) versus bias voltage characteristics. Clear differences in the systems are evident: the DMTJ with NiFe particles shows a marked peak in TMR at low bias, whereas the dependence of TMR on bias is much weaker for the control MTJ without embedded particles. Hence the TMR at low bias is enhanced by the Coulomb blockade effects.

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DO - 10.1063/1.3072721

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VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

M1 - 07C923

ER -

Spin-dependent tunneling through NiFe nanoparticles

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