Spin injection with three terminal device based on (Ga,Mn)As/n GaAs-tunnel junction

T. Kita; M. Kohda; Y. Ohno; F. Matsukura; H. Ohno

doi:10.1002/pssc.200672865

Spin injection with three terminal device based on (Ga,Mn)As/n GaAs-tunnel junction

T. Kita, M. Kohda, Y. Ohno, F. Matsukura, H. Ohno

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

We have fabricated a three terminal device integrating a (Ga,Mn)As Esaki diode and a light emitting diode (LED) to investigate the bias-voltage dependence of the injection of spin polarized electrons. The electroluminescence polarization (P_el) from the LED was measured under Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The polarization shows strong dependence on the bias applied to the Esaki diode when the LED bias is fixed. The maximum P _EL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are injected into the LED.

Original language	English
Pages (from-to)	4164-4167
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
Issue number	12
DOIs	https://doi.org/10.1002/pssc.200672865
Publication status	Published - 2006 Dec 1
Event	4th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors, PASPS-IV - Sendai, Japan Duration: 2006 Aug 15 → 2006 Aug 18

ASJC Scopus subject areas

Condensed Matter Physics

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title = "Spin injection with three terminal device based on (Ga,Mn)As/n GaAs-tunnel junction",

abstract = "We have fabricated a three terminal device integrating a (Ga,Mn)As Esaki diode and a light emitting diode (LED) to investigate the bias-voltage dependence of the injection of spin polarized electrons. The electroluminescence polarization (Pel) from the LED was measured under Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The polarization shows strong dependence on the bias applied to the Esaki diode when the LED bias is fixed. The maximum P EL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are injected into the LED.",

author = "T. Kita and M. Kohda and Y. Ohno and F. Matsukura and H. Ohno",

year = "2006",

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day = "1",

doi = "10.1002/pssc.200672865",

language = "English",

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TY - JOUR

T1 - Spin injection with three terminal device based on (Ga,Mn)As/n GaAs-tunnel junction

AU - Kita, T.

AU - Kohda, M.

AU - Ohno, Y.

AU - Matsukura, F.

AU - Ohno, H.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - We have fabricated a three terminal device integrating a (Ga,Mn)As Esaki diode and a light emitting diode (LED) to investigate the bias-voltage dependence of the injection of spin polarized electrons. The electroluminescence polarization (Pel) from the LED was measured under Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The polarization shows strong dependence on the bias applied to the Esaki diode when the LED bias is fixed. The maximum P EL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are injected into the LED.

AB - We have fabricated a three terminal device integrating a (Ga,Mn)As Esaki diode and a light emitting diode (LED) to investigate the bias-voltage dependence of the injection of spin polarized electrons. The electroluminescence polarization (Pel) from the LED was measured under Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The polarization shows strong dependence on the bias applied to the Esaki diode when the LED bias is fixed. The maximum P EL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are injected into the LED.

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U2 - 10.1002/pssc.200672865

DO - 10.1002/pssc.200672865

M3 - Conference article

AN - SCOPUS:49649104547

SN - 1862-6351

VL - 3

SP - 4164

EP - 4167

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 12

T2 - 4th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors, PASPS-IV

Y2 - 15 August 2006 through 18 August 2006

ER -

Spin injection with three terminal device based on (Ga,Mn)As/n GaAs-tunnel junction

Abstract

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