Spin-polarized transport through doped nanotube junctions in presence of applied magnetic field

A. A. Farajian; H. Mizuseki; Y. Kawazoe

doi:10.1117/12.514540

Spin-polarized transport through doped nanotube junctions in presence of applied magnetic field

A. A. Farajian, H. Mizuseki, Y. Kawazoe

New Industry Creation Hatchery Center (NICHe)

Tohoku University

Research output: Contribution to journal › Conference article › peer-review

Abstract

The effects of different spin orientations on transport through carbon nanotubes are studied, using a simple tight-binding model within the mean-field approximation. It turns out that, in the absence of external magnetic field, the mean-field ground states of both semiconducting and metallic nanotubes are antiferromagnetic. As regards electronic/transport properties, it is observed that the conductance characteristics of spin-up and spin-down carriers are separated, and a negative differential resistance (NDR) feature in the I-V characteristics is detected, when the system is subjected to external magnetic field. NDR is particularly interesting for a wide range of applications.

Original language	English
Pages (from-to)	472-474
Number of pages	3
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5023
DOIs	https://doi.org/10.1117/12.514540
Publication status	Published - 2003
Event	10th International Symposium on Nanostructures: Physics and Technology - St. Petersburg, Russian Federation Duration: 2002 Jun 17 → 2002 Jun 21

Keywords

Carbon nanotubes
Current-voltage characteristics
Doped nanotube junctions
Negative differential resistance (NDR)
Spin-polarized transport

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10.1117/12.514540

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title = "Spin-polarized transport through doped nanotube junctions in presence of applied magnetic field",

abstract = "The effects of different spin orientations on transport through carbon nanotubes are studied, using a simple tight-binding model within the mean-field approximation. It turns out that, in the absence of external magnetic field, the mean-field ground states of both semiconducting and metallic nanotubes are antiferromagnetic. As regards electronic/transport properties, it is observed that the conductance characteristics of spin-up and spin-down carriers are separated, and a negative differential resistance (NDR) feature in the I-V characteristics is detected, when the system is subjected to external magnetic field. NDR is particularly interesting for a wide range of applications.",

keywords = "Carbon nanotubes, Current-voltage characteristics, Doped nanotube junctions, Negative differential resistance (NDR), Spin-polarized transport",

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journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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TY - JOUR

T1 - Spin-polarized transport through doped nanotube junctions in presence of applied magnetic field

AU - Farajian, A. A.

AU - Mizuseki, H.

AU - Kawazoe, Y.

PY - 2003

Y1 - 2003

N2 - The effects of different spin orientations on transport through carbon nanotubes are studied, using a simple tight-binding model within the mean-field approximation. It turns out that, in the absence of external magnetic field, the mean-field ground states of both semiconducting and metallic nanotubes are antiferromagnetic. As regards electronic/transport properties, it is observed that the conductance characteristics of spin-up and spin-down carriers are separated, and a negative differential resistance (NDR) feature in the I-V characteristics is detected, when the system is subjected to external magnetic field. NDR is particularly interesting for a wide range of applications.

AB - The effects of different spin orientations on transport through carbon nanotubes are studied, using a simple tight-binding model within the mean-field approximation. It turns out that, in the absence of external magnetic field, the mean-field ground states of both semiconducting and metallic nanotubes are antiferromagnetic. As regards electronic/transport properties, it is observed that the conductance characteristics of spin-up and spin-down carriers are separated, and a negative differential resistance (NDR) feature in the I-V characteristics is detected, when the system is subjected to external magnetic field. NDR is particularly interesting for a wide range of applications.

KW - Carbon nanotubes

KW - Current-voltage characteristics

KW - Doped nanotube junctions

KW - Negative differential resistance (NDR)

KW - Spin-polarized transport

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DO - 10.1117/12.514540

M3 - Conference article

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VL - 5023

SP - 472

EP - 474

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - 10th International Symposium on Nanostructures: Physics and Technology

Y2 - 17 June 2002 through 21 June 2002

ER -

Spin-polarized transport through doped nanotube junctions in presence of applied magnetic field

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