Spin-polarized tunneling magnetoresistive effect in ferromagnet/insulator/ferromagnet junctions

Terunobu Miyazaki, Nobuki Tezuka, Seiji Kumagai

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Current status on the study of spin-polarized tunneling magnetoresistive effect was reviewed. Special emphasis was placed on the tunneling barrier height dependence of magnetoresistance ratio and interlayer exchange coupling in the microstructured junctions made by photolithography.

Original languageEnglish
Pages (from-to)256-260
Number of pages5
JournalPhysica B: Condensed Matter
Publication statusPublished - 1997 Jul


  • Interlayer exchange coupling
  • Magnetoresistance
  • Spin tunneling magnetoresistivity effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Spin-polarized tunneling magnetoresistive effect in ferromagnet/insulator/ferromagnet junctions'. Together they form a unique fingerprint.

Cite this