TY - JOUR
T1 - Spin-polarized tunneling magnetoresistive effect in ferromagnet/insulator/ferromagnet junctions
AU - Miyazaki, Terunobu
AU - Tezuka, Nobuki
AU - Kumagai, Seiji
N1 - Funding Information:
This researchw as supportedb y Asahi-garasu and Proposal Based AdvancedI ndustrialT ech-nology R&D Program foundationas nd in part by a Grant-in-Aidf or ScientificR esearch( No. 08405001f)r omthe Ministryo f EducationS,c ience, Sportsa ndC ultureo f Japan.
PY - 1997/7
Y1 - 1997/7
N2 - Current status on the study of spin-polarized tunneling magnetoresistive effect was reviewed. Special emphasis was placed on the tunneling barrier height dependence of magnetoresistance ratio and interlayer exchange coupling in the microstructured junctions made by photolithography.
AB - Current status on the study of spin-polarized tunneling magnetoresistive effect was reviewed. Special emphasis was placed on the tunneling barrier height dependence of magnetoresistance ratio and interlayer exchange coupling in the microstructured junctions made by photolithography.
KW - Interlayer exchange coupling
KW - Magnetoresistance
KW - Spin tunneling magnetoresistivity effect
UR - http://www.scopus.com/inward/record.url?scp=17144437308&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=17144437308&partnerID=8YFLogxK
U2 - 10.1016/S0921-4526(97)00152-X
DO - 10.1016/S0921-4526(97)00152-X
M3 - Article
AN - SCOPUS:17144437308
SN - 0921-4526
VL - 237-238
SP - 256
EP - 260
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
ER -