Spin-RAM for normally-off computer

K. Ando, K. Yakushiji, H. Kubota, A. Fukushima, S. Yuasa, T. Kai, T. Kishi, N. Shimomura, H. Aikawa, M. Yoshikawa, T. Nagase, K. Nishiyama, E. Kitagawa, T. Daibou, M. Amano, S. Takahashi, M. Nakayama, S. Ikegawa, M. Nagamine, J. OzekiD. Watanabe, H. Yoda, T. Nozaki, Y. Suzuki, M. Oogane, S. Mizukami, Y. Ando, T. Miyazaki, Y. Nakatani

Research output: Contribution to conferencePaperpeer-review

3 Citations (Scopus)


Spin-RAM technologies for operation speed faster than 30 ns, memory capacity larger than 1 Gbits and practically infinite read/write endurance have been developed by using magnetic tunnel junctions with perpendicular magnetization layers. Combination of Spin-RAM and power-gating technology will enable ultra low power computer called Normally-Off Computer.

Original languageEnglish
Number of pages6
Publication statusPublished - 2011
Event2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011 - Shanghai, China
Duration: 2011 Nov 72011 Nov 9


Conference2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011


  • current-induced-magnetization-reversal
  • MTJ
  • perpendicular magnetization
  • Spin-RAM
  • TMR


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