Spin-RAM technologies for operation speed faster than 30 ns, memory capacity larger than 1 Gbits and practically infinite read/write endurance have been developed by using magnetic tunnel junctions with perpendicular magnetization layers. Combination of Spin-RAM and power-gating technology will enable ultra low power computer called Normally-Off Computer.
|Number of pages||6|
|Publication status||Published - 2011|
|Event||2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011 - Shanghai, China|
Duration: 2011 Nov 7 → 2011 Nov 9
|Conference||2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011|
|Period||11/11/7 → 11/11/9|
- perpendicular magnetization