Spin-RAM for normally-off computer

K. Ando; K. Yakushiji; H. Kubota; A. Fukushima; S. Yuasa; T. Kai; T. Kishi; N. Shimomura; H. Aikawa; M. Yoshikawa; T. Nagase; K. Nishiyama; E. Kitagawa; T. Daibou; M. Amano; S. Takahashi; M. Nakayama; S. Ikegawa; M. Nagamine; J. Ozeki; D. Watanabe; H. Yoda; T. Nozaki; Y. Suzuki; M. Oogane; S. Mizukami; Y. Ando; T. Miyazaki; Y. Nakatani

doi:10.1109/NVMTS.2011.6137104

Spin-RAM for normally-off computer

K. Ando, K. Yakushiji, H. Kubota, A. Fukushima, S. Yuasa, T. Kai, T. Kishi, N. Shimomura, H. Aikawa, M. Yoshikawa, T. Nagase, K. Nishiyama, E. Kitagawa, T. Daibou, M. Amano, S. Takahashi, M. Nakayama, S. Ikegawa, M. Nagamine, J. OzekiD. Watanabe, H. Yoda, T. Nozaki, Y. Suzuki, M. Oogane, S. Mizukami, Y. Ando, T. Miyazaki, Y. Nakatani

Research output: Contribution to conference › Paper › peer-review

3 Citations (Scopus)

Abstract

Spin-RAM technologies for operation speed faster than 30 ns, memory capacity larger than 1 Gbits and practically infinite read/write endurance have been developed by using magnetic tunnel junctions with perpendicular magnetization layers. Combination of Spin-RAM and power-gating technology will enable ultra low power computer called Normally-Off Computer.

Original language	English
Pages	20-25
Number of pages	6
DOIs	https://doi.org/10.1109/NVMTS.2011.6137104
Publication status	Published - 2011
Event	2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011 - Shanghai, China Duration: 2011 Nov 7 → 2011 Nov 9

Conference

Conference	2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011
Country/Territory	China
City	Shanghai
Period	11/11/7 → 11/11/9

Keywords

current-induced-magnetization-reversal
MTJ
perpendicular magnetization
Spin-RAM
TMR

Access to Document

10.1109/NVMTS.2011.6137104

Cite this

Ando, K., Yakushiji, K., Kubota, H., Fukushima, A., Yuasa, S., Kai, T., Kishi, T., Shimomura, N., Aikawa, H., Yoshikawa, M., Nagase, T., Nishiyama, K., Kitagawa, E., Daibou, T., Amano, M., Takahashi, S., Nakayama, M., Ikegawa, S., Nagamine, M., ... Nakatani, Y. (2011). Spin-RAM for normally-off computer. 20-25. Paper presented at 2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011, Shanghai, China. https://doi.org/10.1109/NVMTS.2011.6137104

@conference{f8a32191f04d4c749168ac692246fa34,

title = "Spin-RAM for normally-off computer",

abstract = "Spin-RAM technologies for operation speed faster than 30 ns, memory capacity larger than 1 Gbits and practically infinite read/write endurance have been developed by using magnetic tunnel junctions with perpendicular magnetization layers. Combination of Spin-RAM and power-gating technology will enable ultra low power computer called Normally-Off Computer.",

keywords = "current-induced-magnetization-reversal, MTJ, perpendicular magnetization, Spin-RAM, TMR",

author = "K. Ando and K. Yakushiji and H. Kubota and A. Fukushima and S. Yuasa and T. Kai and T. Kishi and N. Shimomura and H. Aikawa and M. Yoshikawa and T. Nagase and K. Nishiyama and E. Kitagawa and T. Daibou and M. Amano and S. Takahashi and M. Nakayama and S. Ikegawa and M. Nagamine and J. Ozeki and D. Watanabe and H. Yoda and T. Nozaki and Y. Suzuki and M. Oogane and S. Mizukami and Y. Ando and T. Miyazaki and Y. Nakatani",

year = "2011",

doi = "10.1109/NVMTS.2011.6137104",

language = "English",

pages = "20--25",

note = "2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011 ; Conference date: 07-11-2011 Through 09-11-2011",

}

Ando, K, Yakushiji, K, Kubota, H, Fukushima, A, Yuasa, S, Kai, T, Kishi, T, Shimomura, N, Aikawa, H, Yoshikawa, M, Nagase, T, Nishiyama, K, Kitagawa, E, Daibou, T, Amano, M, Takahashi, S, Nakayama, M, Ikegawa, S, Nagamine, M, Ozeki, J, Watanabe, D, Yoda, H, Nozaki, T, Suzuki, Y, Oogane, M , Mizukami, S , Ando, Y, Miyazaki, T & Nakatani, Y 2011, 'Spin-RAM for normally-off computer', Paper presented at 2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011, Shanghai, China, 11/11/7 - 11/11/9 pp. 20-25. https://doi.org/10.1109/NVMTS.2011.6137104

TY - CONF

T1 - Spin-RAM for normally-off computer

AU - Ando, K.

AU - Yakushiji, K.

AU - Kubota, H.

AU - Fukushima, A.

AU - Yuasa, S.

AU - Kai, T.

AU - Kishi, T.

AU - Shimomura, N.

AU - Aikawa, H.

AU - Yoshikawa, M.

AU - Nagase, T.

AU - Nishiyama, K.

AU - Kitagawa, E.

AU - Daibou, T.

AU - Amano, M.

AU - Takahashi, S.

AU - Nakayama, M.

AU - Ikegawa, S.

AU - Nagamine, M.

AU - Ozeki, J.

AU - Watanabe, D.

AU - Yoda, H.

AU - Nozaki, T.

AU - Suzuki, Y.

AU - Oogane, M.

AU - Mizukami, S.

AU - Ando, Y.

AU - Miyazaki, T.

AU - Nakatani, Y.

PY - 2011

Y1 - 2011

N2 - Spin-RAM technologies for operation speed faster than 30 ns, memory capacity larger than 1 Gbits and practically infinite read/write endurance have been developed by using magnetic tunnel junctions with perpendicular magnetization layers. Combination of Spin-RAM and power-gating technology will enable ultra low power computer called Normally-Off Computer.

AB - Spin-RAM technologies for operation speed faster than 30 ns, memory capacity larger than 1 Gbits and practically infinite read/write endurance have been developed by using magnetic tunnel junctions with perpendicular magnetization layers. Combination of Spin-RAM and power-gating technology will enable ultra low power computer called Normally-Off Computer.

KW - current-induced-magnetization-reversal

KW - MTJ

KW - perpendicular magnetization

KW - Spin-RAM

KW - TMR

UR - http://www.scopus.com/inward/record.url?scp=84857160169&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84857160169&partnerID=8YFLogxK

U2 - 10.1109/NVMTS.2011.6137104

DO - 10.1109/NVMTS.2011.6137104

M3 - Paper

AN - SCOPUS:84857160169

SP - 20

EP - 25

T2 - 2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011

Y2 - 7 November 2011 through 9 November 2011

ER -

Spin-RAM for normally-off computer

Abstract

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this