TY - JOUR
T1 - Spin relaxation in GaAs(110) quantum wells
AU - Ohno, Y.
AU - Terauchi, R.
AU - Adachi, T.
AU - Matsukura, F.
AU - Ohno, H.
PY - 1999/1/1
Y1 - 1999/1/1
N2 - We investigated electron spin relaxation time τs in GaAs/AlGaAs (110) quantum wells (QWs), in which a predominant spin scattering mechanism [D'yakonov-Perel' (DP) mechanism] for conventional (100) QWs is substantially suppressed; τsin (110) QWs was of nanosecond order at room temperature, more than an order of magnitude longer than that of the (100) counterpart. The mechanism responsible for the spin relaxation was examined by studying the quantized energy, electron mobility, and temperature dependences of τs. The results suggest that in the absence of DP interaction, electron-hole exchange interaction limits τsin a wide temperature range (∼0–300K).
AB - We investigated electron spin relaxation time τs in GaAs/AlGaAs (110) quantum wells (QWs), in which a predominant spin scattering mechanism [D'yakonov-Perel' (DP) mechanism] for conventional (100) QWs is substantially suppressed; τsin (110) QWs was of nanosecond order at room temperature, more than an order of magnitude longer than that of the (100) counterpart. The mechanism responsible for the spin relaxation was examined by studying the quantized energy, electron mobility, and temperature dependences of τs. The results suggest that in the absence of DP interaction, electron-hole exchange interaction limits τsin a wide temperature range (∼0–300K).
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U2 - 10.1103/PhysRevLett.83.4196
DO - 10.1103/PhysRevLett.83.4196
M3 - Article
AN - SCOPUS:0001624546
SN - 0031-9007
VL - 83
SP - 4196
EP - 4199
JO - Physical Review Letters
JF - Physical Review Letters
IS - 20
ER -