Spin relaxation in GaAs(110) quantum wells

Y. Ohno, R. Terauchi, T. Adachi, F. Matsukura, H. Ohno

Research output: Contribution to journalArticlepeer-review

403 Citations (Scopus)


We investigated electron spin relaxation time τs in GaAs/AlGaAs (110) quantum wells (QWs), in which a predominant spin scattering mechanism [D'yakonov-Perel' (DP) mechanism] for conventional (100) QWs is substantially suppressed; τsin (110) QWs was of nanosecond order at room temperature, more than an order of magnitude longer than that of the (100) counterpart. The mechanism responsible for the spin relaxation was examined by studying the quantized energy, electron mobility, and temperature dependences of τs. The results suggest that in the absence of DP interaction, electron-hole exchange interaction limits τsin a wide temperature range (∼0–300K).

Original languageEnglish
Pages (from-to)4196-4199
Number of pages4
JournalPhysical Review Letters
Issue number20
Publication statusPublished - 1999 Jan 1


Dive into the research topics of 'Spin relaxation in GaAs(110) quantum wells'. Together they form a unique fingerprint.

Cite this