Spin relaxation in n-modulation doped GaAs/AlGaAs (1 1 0) quantum wells

T. Adachi, Y. Ohno, F. Matsukura, H. Ohno

Research output: Contribution to journalArticlepeer-review

53 Citations (Scopus)


We measured the electron spin relaxation time τs in n-modulation doped GaAs/AlGaAs (110) multiple quantum wells by pump probe method. The value of τs exceeds 10 ns even at room temperature, which is two orders of magnitude longer than that in (001) GaAs quantum wells. The τs dependence on quantized-electron energy, pump beam power and temperature can qualitatively be explained by the reduction of the electron-hole exchange interaction due to screening.

Original languageEnglish
Pages (from-to)36-39
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1-3
Publication statusPublished - 2001 May


  • Electron spin
  • GaAs/AlGaAs
  • Quantum wells
  • Spin relaxation


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