We measured the electron spin relaxation time τs in n-modulation doped GaAs/AlGaAs (110) multiple quantum wells by pump probe method. The value of τs exceeds 10 ns even at room temperature, which is two orders of magnitude longer than that in (001) GaAs quantum wells. The τs dependence on quantized-electron energy, pump beam power and temperature can qualitatively be explained by the reduction of the electron-hole exchange interaction due to screening.
|Number of pages||4|
|Journal||Physica E: Low-Dimensional Systems and Nanostructures|
|Publication status||Published - 2001 May|
- Electron spin
- Quantum wells
- Spin relaxation