Spin-torque switching window, thermal stability, and material parameters of MgO tunnel junctions

T. Devolder; L. Bianchini; K. Miura; K. Ito; Joo Von Kim; P. Crozat; V. Morin; A. Helmer; C. Chappert; S. Ikeda; H. Ohno

doi:10.1063/1.3576937

Spin-torque switching window, thermal stability, and material parameters of MgO tunnel junctions

T. Devolder, L. Bianchini, K. Miura, K. Ito, Joo Von Kim, P. Crozat, V. Morin, A. Helmer, C. Chappert, S. Ikeda, H. Ohno

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

We study the use of in-plane magnetized free layers with artificially lowered effective magnetization, in the context of spin-torque random access memories with magnetic tunnel junctions. We determine the field-voltage window for direct overwrite switching and thermal stability. We relate them to the magnetic constants extracted from the telegraph noise and high frequency noise exhibited by the junctions under specific conditions.

Original language	English
Article number	162502
Journal	Applied Physics Letters
Volume	98
Issue number	16
DOIs	https://doi.org/10.1063/1.3576937
Publication status	Published - 2011 Apr 18

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title = "Spin-torque switching window, thermal stability, and material parameters of MgO tunnel junctions",

abstract = "We study the use of in-plane magnetized free layers with artificially lowered effective magnetization, in the context of spin-torque random access memories with magnetic tunnel junctions. We determine the field-voltage window for direct overwrite switching and thermal stability. We relate them to the magnetic constants extracted from the telegraph noise and high frequency noise exhibited by the junctions under specific conditions.",

author = "T. Devolder and L. Bianchini and K. Miura and K. Ito and Kim, {Joo Von} and P. Crozat and V. Morin and A. Helmer and C. Chappert and S. Ikeda and H. Ohno",

note = "Funding Information: T.D. acknowledges financial support from Hitachi, Ltd. This work was supported by the FIRST program from JSPS and the GCOE program at Tohoku University.",

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T1 - Spin-torque switching window, thermal stability, and material parameters of MgO tunnel junctions

AU - Devolder, T.

AU - Bianchini, L.

AU - Miura, K.

AU - Ito, K.

AU - Kim, Joo Von

AU - Crozat, P.

AU - Morin, V.

AU - Helmer, A.

AU - Chappert, C.

AU - Ikeda, S.

AU - Ohno, H.

N1 - Funding Information: T.D. acknowledges financial support from Hitachi, Ltd. This work was supported by the FIRST program from JSPS and the GCOE program at Tohoku University.

PY - 2011/4/18

Y1 - 2011/4/18

N2 - We study the use of in-plane magnetized free layers with artificially lowered effective magnetization, in the context of spin-torque random access memories with magnetic tunnel junctions. We determine the field-voltage window for direct overwrite switching and thermal stability. We relate them to the magnetic constants extracted from the telegraph noise and high frequency noise exhibited by the junctions under specific conditions.

AB - We study the use of in-plane magnetized free layers with artificially lowered effective magnetization, in the context of spin-torque random access memories with magnetic tunnel junctions. We determine the field-voltage window for direct overwrite switching and thermal stability. We relate them to the magnetic constants extracted from the telegraph noise and high frequency noise exhibited by the junctions under specific conditions.

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VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

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ER -

Spin-torque switching window, thermal stability, and material parameters of MgO tunnel junctions

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