Spin torque transistor revisited

Takahiro Chiba; Gerrit E.W. Bauer; Saburo Takahashi

doi:10.1063/1.4806982

Spin torque transistor revisited

Takahiro Chiba, Gerrit E.W. Bauer, Saburo Takahashi

Tohoku University

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We theoretically study the operation of a 4-terminal device consisting of two lateral thin-film spin valves that are coupled by a magnetic insulator such as yttrium iron garnet via the spin transfer torque. By magnetoelectronic circuit theory we calculate the current voltage characteristics and find negative differential resistance and differential gain in a large region of parameter space. We demonstrate that functionality is preserved when the control spin valve is replaced by a normal metal film with a large spin Hall angle.

Original language	English
Article number	192412
Journal	Applied Physics Letters
Volume	102
Issue number	19
DOIs	https://doi.org/10.1063/1.4806982
Publication status	Published - 2013 May 13

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title = "Spin torque transistor revisited",

abstract = "We theoretically study the operation of a 4-terminal device consisting of two lateral thin-film spin valves that are coupled by a magnetic insulator such as yttrium iron garnet via the spin transfer torque. By magnetoelectronic circuit theory we calculate the current voltage characteristics and find negative differential resistance and differential gain in a large region of parameter space. We demonstrate that functionality is preserved when the control spin valve is replaced by a normal metal film with a large spin Hall angle.",

author = "Takahiro Chiba and Bauer, {Gerrit E.W.} and Saburo Takahashi",

note = "Funding Information: This work was supported by FOM (Stichting voor Fundamenteel Onderzoek der Materie), EU-ICT-7 “MACALO”, the ICC-IMR, DFG Priority Programme 1538 “Spin-Caloric Transport” (GO 944/4), and KAKENHI (No. 22540346).",

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N2 - We theoretically study the operation of a 4-terminal device consisting of two lateral thin-film spin valves that are coupled by a magnetic insulator such as yttrium iron garnet via the spin transfer torque. By magnetoelectronic circuit theory we calculate the current voltage characteristics and find negative differential resistance and differential gain in a large region of parameter space. We demonstrate that functionality is preserved when the control spin valve is replaced by a normal metal film with a large spin Hall angle.

AB - We theoretically study the operation of a 4-terminal device consisting of two lateral thin-film spin valves that are coupled by a magnetic insulator such as yttrium iron garnet via the spin transfer torque. By magnetoelectronic circuit theory we calculate the current voltage characteristics and find negative differential resistance and differential gain in a large region of parameter space. We demonstrate that functionality is preserved when the control spin valve is replaced by a normal metal film with a large spin Hall angle.

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Spin torque transistor revisited

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