TY - JOUR
T1 - Spin-transfer switching in magnetic tunnel junctions with synthetic ferri-magnetic free layer
AU - Nishimura, M.
AU - Oogane, M.
AU - Naganuma, H.
AU - Inami, N.
AU - Ikeda, S.
AU - Ohno, H.
AU - Ando, Y.
PY - 2010
Y1 - 2010
N2 - We have fabricated the SyF structure with both high annealing stability and strong interlayer exchange coupling and investigated tunnelling magnetoresistance (TMR) and spin-transfer switching properties of magnetic tunnel junctions (MTJs) with developed SyF free layer. The fabricated SyF with structure of Ta/Ru/CoFe/Ru/CoFeB possessed high annealing stability of 400°C and strong interlayer exchange coupling. Consequently, a large TMR ratio of 122% has been observed after annealing at high temperature of 350°C. In addition, we have successfully observed spin-transfer switching by the net current density of 14 MA/cm2 and the large thermal stability factor of 62.
AB - We have fabricated the SyF structure with both high annealing stability and strong interlayer exchange coupling and investigated tunnelling magnetoresistance (TMR) and spin-transfer switching properties of magnetic tunnel junctions (MTJs) with developed SyF free layer. The fabricated SyF with structure of Ta/Ru/CoFe/Ru/CoFeB possessed high annealing stability of 400°C and strong interlayer exchange coupling. Consequently, a large TMR ratio of 122% has been observed after annealing at high temperature of 350°C. In addition, we have successfully observed spin-transfer switching by the net current density of 14 MA/cm2 and the large thermal stability factor of 62.
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U2 - 10.1088/1742-6596/200/5/052018
DO - 10.1088/1742-6596/200/5/052018
M3 - Conference article
AN - SCOPUS:77957089039
SN - 1742-6588
VL - 200
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
IS - SECTION 5
M1 - 052018
ER -