Spin transfer switching in the nanosecond regime for CoFeB/MgO/CoFeB ferromagnetic tunnel junctions

Tatsuya Aoki; Yasuo Ando; Daisuke Watanabe; Mikihiko Oogane; Terunobu Miyazaki

doi:10.1063/1.2930873

Spin transfer switching in the nanosecond regime for CoFeB/MgO/CoFeB ferromagnetic tunnel junctions

Tatsuya Aoki, Yasuo Ando, Daisuke Watanabe, Mikihiko Oogane, Terunobu Miyazaki

ENG - Applied Physics

Tohoku University

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

Detailed spin transfer switching properties in the nanosecond region for CoFeB/MgO(001)/CoFeB magnetic tunnel junctions are reported. The switching current (I_C) was greatly increased in the <10 ns region. This characteristic resembles that of current-perpendicular-to-plane giant magnetoresistance (CPP-GMR), although both the junction geometry and resistance differ from those of a CPP-GMR device. We discussed the switching properties considering the contribution of high frequency loss and the theoretical limitation of the analytical model. Furthermore, we observed real-time switching in the nanosecond region. Using these results, we discuss the spin transfer switching mechanism in the nanosecond region with both adiabatic and thermally activated models.

Original language	English
Article number	103911
Journal	Journal of Applied Physics
Volume	103
Issue number	10
DOIs	https://doi.org/10.1063/1.2930873
Publication status	Published - 2008

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title = "Spin transfer switching in the nanosecond regime for CoFeB/MgO/CoFeB ferromagnetic tunnel junctions",

abstract = "Detailed spin transfer switching properties in the nanosecond region for CoFeB/MgO(001)/CoFeB magnetic tunnel junctions are reported. The switching current (IC) was greatly increased in the <10 ns region. This characteristic resembles that of current-perpendicular-to-plane giant magnetoresistance (CPP-GMR), although both the junction geometry and resistance differ from those of a CPP-GMR device. We discussed the switching properties considering the contribution of high frequency loss and the theoretical limitation of the analytical model. Furthermore, we observed real-time switching in the nanosecond region. Using these results, we discuss the spin transfer switching mechanism in the nanosecond region with both adiabatic and thermally activated models.",

author = "Tatsuya Aoki and Yasuo Ando and Daisuke Watanabe and Mikihiko Oogane and Terunobu Miyazaki",

note = "Funding Information: This study was supported by the “High-Performance Low-Power Consumption Spin Devices and Storage Systems” program under Research and Development for Next-Generation Information Technology by the Ministry of Education, Culture, Sports, Science and Technology of Japan.",

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doi = "10.1063/1.2930873",

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T1 - Spin transfer switching in the nanosecond regime for CoFeB/MgO/CoFeB ferromagnetic tunnel junctions

AU - Aoki, Tatsuya

AU - Ando, Yasuo

AU - Watanabe, Daisuke

AU - Oogane, Mikihiko

AU - Miyazaki, Terunobu

N1 - Funding Information: This study was supported by the “High-Performance Low-Power Consumption Spin Devices and Storage Systems” program under Research and Development for Next-Generation Information Technology by the Ministry of Education, Culture, Sports, Science and Technology of Japan.

PY - 2008

Y1 - 2008

N2 - Detailed spin transfer switching properties in the nanosecond region for CoFeB/MgO(001)/CoFeB magnetic tunnel junctions are reported. The switching current (IC) was greatly increased in the <10 ns region. This characteristic resembles that of current-perpendicular-to-plane giant magnetoresistance (CPP-GMR), although both the junction geometry and resistance differ from those of a CPP-GMR device. We discussed the switching properties considering the contribution of high frequency loss and the theoretical limitation of the analytical model. Furthermore, we observed real-time switching in the nanosecond region. Using these results, we discuss the spin transfer switching mechanism in the nanosecond region with both adiabatic and thermally activated models.

AB - Detailed spin transfer switching properties in the nanosecond region for CoFeB/MgO(001)/CoFeB magnetic tunnel junctions are reported. The switching current (IC) was greatly increased in the <10 ns region. This characteristic resembles that of current-perpendicular-to-plane giant magnetoresistance (CPP-GMR), although both the junction geometry and resistance differ from those of a CPP-GMR device. We discussed the switching properties considering the contribution of high frequency loss and the theoretical limitation of the analytical model. Furthermore, we observed real-time switching in the nanosecond region. Using these results, we discuss the spin transfer switching mechanism in the nanosecond region with both adiabatic and thermally activated models.

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Spin transfer switching in the nanosecond regime for CoFeB/MgO/CoFeB ferromagnetic tunnel junctions

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