Spin transfer switching of current-perpendicular-to-plane giant magnetoresistance devices with Gd-Fe free layers and Ag-spacer materials for light modulator applications

K. Aoshima; Y. Ohtsuka; Y. Hashimoto; N. Funabashi; K. MacHida; K. Kuga; H. Kikuchi; N. Shimidzu

doi:10.1063/1.3560882

Spin transfer switching of current-perpendicular-to-plane giant magnetoresistance devices with Gd-Fe free layers and Ag-spacer materials for light modulator applications

K. Aoshima, Y. Ohtsuka, Y. Hashimoto, N. Funabashi, K. MacHida, K. Kuga, H. Kikuchi, N. Shimidzu

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We investigated how the magneto-optical (MO) and magnetic properties of Gd-Fe-based giant magneto resistance (GMR) films with silver (Ag) spacers are affected using two different free-layer compositions, Gd_21.7Fe _78.3 and Gd_27.5Fe_72.5 (at.). GMR films using Ag spacers exhibited a MO Kerr rotation (_K) that was about 10 larger than that with copper (Cu) spacers. Moreover, GMRs with Gd_21.7Fe _78.3 free layers exhibited larger _K and saturation magnetization (M_s) values than did those with Gd _27.5Fe_72.5 free layers. Current-perpendicular-to-plane (CPP) GMR devices using Gd_21.7Fe_78.3 and Gd _27.5Fe_72.5 free layers with Ag spacers were fabricated and employed in order to investigate the device's spin transfer switching characteristics. The switching current density for CPP-GMR devices using Gd _21.7Fe_78.3 free layers was reduced by 26 compared to Gd_27.5Fe_72.5 free layers. The larger values of M _s exhibited by Gd_21.7Fe_78.3 layers may be attributed to a reduction of switching current. Ultimately, we found that CPP-GMR devices with Gd_21.7Fe_78.3 free layers and Ag spacers are good candidates for the light modulator applications, particularly advanced information display systems.

Original language	English
Article number	07C917
Journal	Journal of Applied Physics
Volume	109
Issue number	7
DOIs	https://doi.org/10.1063/1.3560882
Publication status	Published - 2011 Apr 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.3560882

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@article{b639e303403b4a15b085c729ef96b830,

title = "Spin transfer switching of current-perpendicular-to-plane giant magnetoresistance devices with Gd-Fe free layers and Ag-spacer materials for light modulator applications",

abstract = "We investigated how the magneto-optical (MO) and magnetic properties of Gd-Fe-based giant magneto resistance (GMR) films with silver (Ag) spacers are affected using two different free-layer compositions, Gd21.7Fe 78.3 and Gd27.5Fe72.5 (at.). GMR films using Ag spacers exhibited a MO Kerr rotation (K) that was about 10 larger than that with copper (Cu) spacers. Moreover, GMRs with Gd21.7Fe 78.3 free layers exhibited larger K and saturation magnetization (Ms) values than did those with Gd 27.5Fe72.5 free layers. Current-perpendicular-to-plane (CPP) GMR devices using Gd21.7Fe78.3 and Gd 27.5Fe72.5 free layers with Ag spacers were fabricated and employed in order to investigate the device's spin transfer switching characteristics. The switching current density for CPP-GMR devices using Gd 21.7Fe78.3 free layers was reduced by 26 compared to Gd27.5Fe72.5 free layers. The larger values of M s exhibited by Gd21.7Fe78.3 layers may be attributed to a reduction of switching current. Ultimately, we found that CPP-GMR devices with Gd21.7Fe78.3 free layers and Ag spacers are good candidates for the light modulator applications, particularly advanced information display systems.",

author = "K. Aoshima and Y. Ohtsuka and Y. Hashimoto and N. Funabashi and K. MacHida and K. Kuga and H. Kikuchi and N. Shimidzu",

note = "Funding Information: This research has been supported in part by the National Institute of Information and Communications Technology in Japan.",

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doi = "10.1063/1.3560882",

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T1 - Spin transfer switching of current-perpendicular-to-plane giant magnetoresistance devices with Gd-Fe free layers and Ag-spacer materials for light modulator applications

AU - Aoshima, K.

AU - Ohtsuka, Y.

AU - Hashimoto, Y.

AU - Funabashi, N.

AU - MacHida, K.

AU - Kuga, K.

AU - Kikuchi, H.

AU - Shimidzu, N.

N1 - Funding Information: This research has been supported in part by the National Institute of Information and Communications Technology in Japan.

PY - 2011/4/1

Y1 - 2011/4/1

N2 - We investigated how the magneto-optical (MO) and magnetic properties of Gd-Fe-based giant magneto resistance (GMR) films with silver (Ag) spacers are affected using two different free-layer compositions, Gd21.7Fe 78.3 and Gd27.5Fe72.5 (at.). GMR films using Ag spacers exhibited a MO Kerr rotation (K) that was about 10 larger than that with copper (Cu) spacers. Moreover, GMRs with Gd21.7Fe 78.3 free layers exhibited larger K and saturation magnetization (Ms) values than did those with Gd 27.5Fe72.5 free layers. Current-perpendicular-to-plane (CPP) GMR devices using Gd21.7Fe78.3 and Gd 27.5Fe72.5 free layers with Ag spacers were fabricated and employed in order to investigate the device's spin transfer switching characteristics. The switching current density for CPP-GMR devices using Gd 21.7Fe78.3 free layers was reduced by 26 compared to Gd27.5Fe72.5 free layers. The larger values of M s exhibited by Gd21.7Fe78.3 layers may be attributed to a reduction of switching current. Ultimately, we found that CPP-GMR devices with Gd21.7Fe78.3 free layers and Ag spacers are good candidates for the light modulator applications, particularly advanced information display systems.

AB - We investigated how the magneto-optical (MO) and magnetic properties of Gd-Fe-based giant magneto resistance (GMR) films with silver (Ag) spacers are affected using two different free-layer compositions, Gd21.7Fe 78.3 and Gd27.5Fe72.5 (at.). GMR films using Ag spacers exhibited a MO Kerr rotation (K) that was about 10 larger than that with copper (Cu) spacers. Moreover, GMRs with Gd21.7Fe 78.3 free layers exhibited larger K and saturation magnetization (Ms) values than did those with Gd 27.5Fe72.5 free layers. Current-perpendicular-to-plane (CPP) GMR devices using Gd21.7Fe78.3 and Gd 27.5Fe72.5 free layers with Ag spacers were fabricated and employed in order to investigate the device's spin transfer switching characteristics. The switching current density for CPP-GMR devices using Gd 21.7Fe78.3 free layers was reduced by 26 compared to Gd27.5Fe72.5 free layers. The larger values of M s exhibited by Gd21.7Fe78.3 layers may be attributed to a reduction of switching current. Ultimately, we found that CPP-GMR devices with Gd21.7Fe78.3 free layers and Ag spacers are good candidates for the light modulator applications, particularly advanced information display systems.

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Spin transfer switching of current-perpendicular-to-plane giant magnetoresistance devices with Gd-Fe free layers and Ag-spacer materials for light modulator applications

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