Spin transport in Co/Al2O3/Alq3/Co organic spin valve

Xianmin Zhang; Shigemi Mizukami; Takahide Kubota; Mikihiko Oogane; Hiroshi Naganuma; Yasuo Ando; Terunobu Miyazaki

doi:10.1109/TMAG.2011.2143392

Spin transport in Co/Al₂O₃/Alq₃/Co organic spin valve

Xianmin Zhang, Shigemi Mizukami, Takahide Kubota, Mikihiko Oogane, Hiroshi Naganuma, Yasuo Ando, Terunobu Miyazaki

Tohoku University

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Organic spin valve devices with Co/Al₂O₃/8- hydroxyquinoline-aluminum (Alq₃)/Co sandwich structure were fabricated and studied. Spin transport properties in the devices were investigated by measuring the current-voltage behavior and magnetoresistance (MR) at low temperature. With Al₂O₃ insertion, the relatively larger and positive MR ratio was observed with maximum value of around 19% at 5 K. The MR ratio was reduced with increasing temperature and finally disappeared above 80 K. In the case of devices without Al ₂O₃ inserted layer, we have not observed MR at measured temperature. The role of Al₂O₃ inserted layer, spin transport mechanism, and the decrease of MR with increasing temperature in the organic spin valve were discussed.

Original language	English
Article number	6028262
Pages (from-to)	2649-2651
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	47
Issue number	10
DOIs	https://doi.org/10.1109/TMAG.2011.2143392
Publication status	Published - 2011 Oct

Keywords

Interface layers
magnetoresistance
organic semiconductors
organic spin valve
spintronics

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10.1109/TMAG.2011.2143392

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@article{eecfad560ff74fe6ac57690eca23ed12,

title = "Spin transport in Co/Al2O3/Alq3/Co organic spin valve",

abstract = "Organic spin valve devices with Co/Al2O3/8- hydroxyquinoline-aluminum (Alq3)/Co sandwich structure were fabricated and studied. Spin transport properties in the devices were investigated by measuring the current-voltage behavior and magnetoresistance (MR) at low temperature. With Al2O3 insertion, the relatively larger and positive MR ratio was observed with maximum value of around 19% at 5 K. The MR ratio was reduced with increasing temperature and finally disappeared above 80 K. In the case of devices without Al 2O3 inserted layer, we have not observed MR at measured temperature. The role of Al2O3 inserted layer, spin transport mechanism, and the decrease of MR with increasing temperature in the organic spin valve were discussed.",

keywords = "Interface layers, magnetoresistance, organic semiconductors, organic spin valve, spintronics",

author = "Xianmin Zhang and Shigemi Mizukami and Takahide Kubota and Mikihiko Oogane and Hiroshi Naganuma and Yasuo Ando and Terunobu Miyazaki",

year = "2011",

month = oct,

doi = "10.1109/TMAG.2011.2143392",

language = "English",

volume = "47",

pages = "2649--2651",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Spin transport in Co/Al2O3/Alq3/Co organic spin valve

AU - Zhang, Xianmin

AU - Mizukami, Shigemi

AU - Kubota, Takahide

AU - Oogane, Mikihiko

AU - Naganuma, Hiroshi

AU - Ando, Yasuo

AU - Miyazaki, Terunobu

PY - 2011/10

Y1 - 2011/10

N2 - Organic spin valve devices with Co/Al2O3/8- hydroxyquinoline-aluminum (Alq3)/Co sandwich structure were fabricated and studied. Spin transport properties in the devices were investigated by measuring the current-voltage behavior and magnetoresistance (MR) at low temperature. With Al2O3 insertion, the relatively larger and positive MR ratio was observed with maximum value of around 19% at 5 K. The MR ratio was reduced with increasing temperature and finally disappeared above 80 K. In the case of devices without Al 2O3 inserted layer, we have not observed MR at measured temperature. The role of Al2O3 inserted layer, spin transport mechanism, and the decrease of MR with increasing temperature in the organic spin valve were discussed.

AB - Organic spin valve devices with Co/Al2O3/8- hydroxyquinoline-aluminum (Alq3)/Co sandwich structure were fabricated and studied. Spin transport properties in the devices were investigated by measuring the current-voltage behavior and magnetoresistance (MR) at low temperature. With Al2O3 insertion, the relatively larger and positive MR ratio was observed with maximum value of around 19% at 5 K. The MR ratio was reduced with increasing temperature and finally disappeared above 80 K. In the case of devices without Al 2O3 inserted layer, we have not observed MR at measured temperature. The role of Al2O3 inserted layer, spin transport mechanism, and the decrease of MR with increasing temperature in the organic spin valve were discussed.

KW - Interface layers

KW - magnetoresistance

KW - organic semiconductors

KW - organic spin valve

KW - spintronics

UR - http://www.scopus.com/inward/record.url?scp=80053489247&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80053489247&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2011.2143392

DO - 10.1109/TMAG.2011.2143392

M3 - Article

AN - SCOPUS:80053489247

SN - 0018-9464

VL - 47

SP - 2649

EP - 2651

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 10

M1 - 6028262

ER -

Spin transport in Co/Al₂O₃/Alq₃/Co organic spin valve

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