Spin-valve transistor: Technologies and progress

J. C. Lodder, D. J. Monsma, R. Vlutters, T. Shimatsu

Research output: Contribution to journalConference articlepeer-review

20 Citations (Scopus)


The paper describes the necessary technologies needed for realizing a RT operating spin-valve transistor (SVT) which is in fact a magnetic controlled metal base transistor. The preparation of a 350×350 μm2 SVT consisting of an Si emitter and collector and Co/Cu/Co GMR multilayer are described. The metal bonding technology in vacuum is described, which is essential for preparing small SVTs with photolithography and etching technologies. The quality of the bonding interfaces as well as the interface between GMR layer and semiconductor are important for the electrical properties. In more general terms the SVT research also establishes the feasibility of various hybrid structures combining semiconductor technology and spin electronics.

Original languageEnglish
Pages (from-to)119-124
Number of pages6
JournalJournal of Magnetism and Magnetic Materials
Publication statusPublished - 1999 Jun 1
EventProceedings of the 1998 3rd International Symposium on Metallic Multilayers (MML-98) - Vancouver, BC, Can
Duration: 1998 Jun 141998 Jun 19


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