Abstract
At 80 K, not all the dimers of Si(100) appear buckled in the scanning tunneling microscopy (STM) images but a certain number of the dimers arc observed in a symmetric configuration. We report on observations of a two-dimensional spontaneous fluctuation of the symmetric⇔buckled dimer domains at some particular locations. We interpret the spontaneous fluctuation to be induced by the competition of several antiphased c(4 × 2) buckled domains to expand. The fluctuation of domains was interpreted by two mechanisms: a fast switching between buckled dimer domains; and symmetric dimers induced by migration of P defects.
Original language | English |
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Pages (from-to) | 2904-2909 |
Number of pages | 6 |
Journal | Japanese Journal of Applied Physics |
Volume | 38 |
Issue number | 5 A |
DOIs | |
Publication status | Published - 1999 |
Keywords
- C defect
- Dimers
- Fluctuation
- P defect
- STM
- Si(100)