TY - GEN
T1 - Spontaneous formation of ultra-short period lateral composition modulation in lInGaAsN/TlInP structures
AU - Ishimaru, M.
AU - Tanaka, Y.
AU - Hasegawa, S.
AU - Asahi, H.
AU - Sato, K.
AU - Konno, T. J.
PY - 2009
Y1 - 2009
N2 - We prepared TlInGaAsN/TlInP triple quantum well structures using gas source molecular beam epitaxy and characterized their structures by means of transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM). Cross-sectional TEM and STEM observations and electron diffraction experiments revealed that naturally-formed vertical quantum wells, so-called lateral composition modulation, are formed in TlInGaAsN layers. Their modulation period was estimated to ~1 nm which is much smaller than that reported previously.
AB - We prepared TlInGaAsN/TlInP triple quantum well structures using gas source molecular beam epitaxy and characterized their structures by means of transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM). Cross-sectional TEM and STEM observations and electron diffraction experiments revealed that naturally-formed vertical quantum wells, so-called lateral composition modulation, are formed in TlInGaAsN layers. Their modulation period was estimated to ~1 nm which is much smaller than that reported previously.
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U2 - 10.1109/ICIPRM.2009.5012493
DO - 10.1109/ICIPRM.2009.5012493
M3 - Conference contribution
AN - SCOPUS:70349501255
SN - 9781424434336
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
SP - 253
EP - 254
BT - IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
T2 - IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
Y2 - 10 May 2009 through 14 May 2009
ER -