TY - GEN
T1 - Spontaneous modification of grain boundary configuration and its application for realization of bulk multicrystalline SI with electrically inactive grain boundaries
AU - Usami, Noritaka
AU - Kutsukake, Kentaro
AU - Sugawara, Takamasa
AU - Fujiwara, Kozo
AU - Pan, Wugen
AU - Nose, Yoshitaro
AU - Shishido, Toetsu
AU - Nakajima, Kazuo
PY - 2006
Y1 - 2006
N2 - We utilized bi-crystals with an artificially designed grain boundary configuration as a seed for floating-zone growth of multicrystalline Si (mc-Si) in order to clarify the impact of the initial grain boundary configuration on the crystal growth. Intentionally introduced large tilt deviation from Σ3 was found to lead to appearance of new crystal grains accompanied by spontaneous modification of the grain boundary to electrically inactive Σ3 under appropriate amount of the supercooling. Based on this mechanism, a model crystal growth experiment was performed to realize mc-Si with electrically inactive grain boundaries using purposely designed 〈110〉-oriented seed crystal with an array of random grain boundaries. After 40 mm growth, all the grain boundaries were revealed to be modified to electrically inactive. These results suggest that bulk mc-Si with electrically inactive grain boundaries could be grown even by the practical casting method if oriented crystal grains with random grain boundaries could be somehow realized at the bottom of the crucible.
AB - We utilized bi-crystals with an artificially designed grain boundary configuration as a seed for floating-zone growth of multicrystalline Si (mc-Si) in order to clarify the impact of the initial grain boundary configuration on the crystal growth. Intentionally introduced large tilt deviation from Σ3 was found to lead to appearance of new crystal grains accompanied by spontaneous modification of the grain boundary to electrically inactive Σ3 under appropriate amount of the supercooling. Based on this mechanism, a model crystal growth experiment was performed to realize mc-Si with electrically inactive grain boundaries using purposely designed 〈110〉-oriented seed crystal with an array of random grain boundaries. After 40 mm growth, all the grain boundaries were revealed to be modified to electrically inactive. These results suggest that bulk mc-Si with electrically inactive grain boundaries could be grown even by the practical casting method if oriented crystal grains with random grain boundaries could be somehow realized at the bottom of the crucible.
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U2 - 10.1109/WCPEC.2006.279616
DO - 10.1109/WCPEC.2006.279616
M3 - Conference contribution
AN - SCOPUS:41749120086
SN - 1424400163
SN - 9781424400164
T3 - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
SP - 960
EP - 963
BT - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
PB - IEEE Computer Society
T2 - 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Y2 - 7 May 2006 through 12 May 2006
ER -
