TY - GEN
T1 - SPRAM (Spin-transfer torque RAM) technology for Green IT world
AU - Kawahara, T.
AU - Takahashi, H.
AU - Ohno, H.
PY - 2008
Y1 - 2008
N2 - In Green IT world, we could enjoy our daily life with immersed digital equipments that have perfect normally OFF and instant ON functions resulting from environment-conscious technologies. For achieving this, firstly we need a non-volatile RAM technology, namely endowed with non-volatility, infinite number of write cycles, and fast operation at the same time. SPRAM is the most promising solution for this demand.
AB - In Green IT world, we could enjoy our daily life with immersed digital equipments that have perfect normally OFF and instant ON functions resulting from environment-conscious technologies. For achieving this, firstly we need a non-volatile RAM technology, namely endowed with non-volatility, infinite number of write cycles, and fast operation at the same time. SPRAM is the most promising solution for this demand.
UR - http://www.scopus.com/inward/record.url?scp=63249100645&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=63249100645&partnerID=8YFLogxK
U2 - 10.1109/EDSSC.2008.4760631
DO - 10.1109/EDSSC.2008.4760631
M3 - Conference contribution
AN - SCOPUS:63249100645
SN - 9781424425402
T3 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
BT - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
T2 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
Y2 - 8 December 2008 through 10 December 2008
ER -