SPRAM with large thermal stability for high immunity to read disturbance and long retention for high-temperature operation

K. Ono; T. Kawahara; R. Takemura; K. Miura; Michihiko Yamanouchi; J. Hayakawa; K. Ito; H. Takahashi; H. Matsuoka; S. Ikeda; H. Ohno

SPRAM with large thermal stability for high immunity to read disturbance and long retention for high-temperature operation

K. Ono, T. Kawahara, R. Takemura, K. Miura, Michihiko Yamanouchi, J. Hayakawa, K. Ito, H. Takahashi, H. Matsuoka, S. Ikeda, H. Ohno

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

We investigate the effect of temperature on current-induced magnetization switching in SPRAM (SPin-transfer torque RAM) consisting of MgO-barrier-based magnetic tunnel junctions (MTJs) with a synthetic ferrimagnetic recording layer (SyF) by comparing the MJTs to those with a single ferromagnetic recording layer. It is found that SPRAM using MTJs with a SyF has two advantages for high-temperature operation: 1) A thermal stability factor E/k_BT as high as 64 at 150°C, which would ensure ten-year retention and ten-year immunity to read disturbance; and 2) an increase of the aspect ratio in the SyF, which leads to high coercivity H_C, resulting in two stable states ("0" or "1") at high temperature.

Original language	English
Title of host publication	2009 Symposium on VLSI Technology, VLSIT 2009
Pages	228-229
Number of pages	2
Publication status	Published - 2009 Nov 16
Event	2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan Duration: 2009 Jun 16 → 2009 Jun 18

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Other

Other	2009 Symposium on VLSI Technology, VLSIT 2009
Country/Territory	Japan
City	Kyoto
Period	09/6/16 → 09/6/18

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Ono, K., Kawahara, T., Takemura, R., Miura, K., Yamanouchi, M., Hayakawa, J., Ito, K., Takahashi, H., Matsuoka, H., Ikeda, S., & Ohno, H. (2009). SPRAM with large thermal stability for high immunity to read disturbance and long retention for high-temperature operation. In 2009 Symposium on VLSI Technology, VLSIT 2009 (pp. 228-229). [5200609] (Digest of Technical Papers - Symposium on VLSI Technology).

SPRAM with large thermal stability for high immunity to read disturbance and long retention for high-temperature operation. / Ono, K.; Kawahara, T.; Takemura, R. et al.

2009 Symposium on VLSI Technology, VLSIT 2009. 2009. p. 228-229 5200609 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ono, K, Kawahara, T, Takemura, R, Miura, K, Yamanouchi, M, Hayakawa, J, Ito, K, Takahashi, H, Matsuoka, H, Ikeda, S & Ohno, H 2009, SPRAM with large thermal stability for high immunity to read disturbance and long retention for high-temperature operation. in 2009 Symposium on VLSI Technology, VLSIT 2009., 5200609, Digest of Technical Papers - Symposium on VLSI Technology, pp. 228-229, 2009 Symposium on VLSI Technology, VLSIT 2009, Kyoto, Japan, 09/6/16.

@inproceedings{1930424c39aa49fd8dcd4aaa8287e096,

title = "SPRAM with large thermal stability for high immunity to read disturbance and long retention for high-temperature operation",

abstract = "We investigate the effect of temperature on current-induced magnetization switching in SPRAM (SPin-transfer torque RAM) consisting of MgO-barrier-based magnetic tunnel junctions (MTJs) with a synthetic ferrimagnetic recording layer (SyF) by comparing the MJTs to those with a single ferromagnetic recording layer. It is found that SPRAM using MTJs with a SyF has two advantages for high-temperature operation: 1) A thermal stability factor E/kBT as high as 64 at 150°C, which would ensure ten-year retention and ten-year immunity to read disturbance; and 2) an increase of the aspect ratio in the SyF, which leads to high coercivity HC, resulting in two stable states ({"}0{"} or {"}1{"}) at high temperature.",

author = "K. Ono and T. Kawahara and R. Takemura and K. Miura and Michihiko Yamanouchi and J. Hayakawa and K. Ito and H. Takahashi and H. Matsuoka and S. Ikeda and H. Ohno",

year = "2009",

month = nov,

day = "16",

language = "English",

isbn = "9784863480094",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

pages = "228--229",

booktitle = "2009 Symposium on VLSI Technology, VLSIT 2009",

note = "2009 Symposium on VLSI Technology, VLSIT 2009 ; Conference date: 16-06-2009 Through 18-06-2009",

}

TY - GEN

T1 - SPRAM with large thermal stability for high immunity to read disturbance and long retention for high-temperature operation

AU - Ono, K.

AU - Kawahara, T.

AU - Takemura, R.

AU - Miura, K.

AU - Yamanouchi, Michihiko

AU - Hayakawa, J.

AU - Ito, K.

AU - Takahashi, H.

AU - Matsuoka, H.

AU - Ikeda, S.

AU - Ohno, H.

PY - 2009/11/16

Y1 - 2009/11/16

N2 - We investigate the effect of temperature on current-induced magnetization switching in SPRAM (SPin-transfer torque RAM) consisting of MgO-barrier-based magnetic tunnel junctions (MTJs) with a synthetic ferrimagnetic recording layer (SyF) by comparing the MJTs to those with a single ferromagnetic recording layer. It is found that SPRAM using MTJs with a SyF has two advantages for high-temperature operation: 1) A thermal stability factor E/kBT as high as 64 at 150°C, which would ensure ten-year retention and ten-year immunity to read disturbance; and 2) an increase of the aspect ratio in the SyF, which leads to high coercivity HC, resulting in two stable states ("0" or "1") at high temperature.

AB - We investigate the effect of temperature on current-induced magnetization switching in SPRAM (SPin-transfer torque RAM) consisting of MgO-barrier-based magnetic tunnel junctions (MTJs) with a synthetic ferrimagnetic recording layer (SyF) by comparing the MJTs to those with a single ferromagnetic recording layer. It is found that SPRAM using MTJs with a SyF has two advantages for high-temperature operation: 1) A thermal stability factor E/kBT as high as 64 at 150°C, which would ensure ten-year retention and ten-year immunity to read disturbance; and 2) an increase of the aspect ratio in the SyF, which leads to high coercivity HC, resulting in two stable states ("0" or "1") at high temperature.

UR - http://www.scopus.com/inward/record.url?scp=71049163454&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71049163454&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:71049163454

SN - 9784863480094

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 228

EP - 229

BT - 2009 Symposium on VLSI Technology, VLSIT 2009

T2 - 2009 Symposium on VLSI Technology, VLSIT 2009

Y2 - 16 June 2009 through 18 June 2009

ER -

SPRAM with large thermal stability for high immunity to read disturbance and long retention for high-temperature operation

Abstract

Publication series

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this