Spray coated photoresist over anisotropically etched deep Si cavities

V. K. Singh; M. Sasaki; Jong Hyeong Song; K. Hane

doi:10.1109/IMNC.2002.1178607

Spray coated photoresist over anisotropically etched deep Si cavities

V. K. Singh, M. Sasaki, Jong Hyeong Song, K. Hane

New Industry Creation Hatchery Center (NICHe)

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

Up to now, we have demonstrated the lithography on the anisotropically wet-etched Si cavities and optical fiber ends. However the fundamental understanding or detailed data relating to the performance of the three-dimensional lithography are not clear. In this study, the photoresist thickness distribution is examined changing the resist drying condition.

Original language	English
Title of host publication	2002 International Microprocesses and Nanotechnology Conference, MNC 2002
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	188-189
Number of pages	2
ISBN (Electronic)	4891140313, 9784891140311
DOIs	https://doi.org/10.1109/IMNC.2002.1178607
Publication status	Published - 2002
Event	International Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan Duration: 2002 Nov 6 → 2002 Nov 8

Publication series

Name	2002 International Microprocesses and Nanotechnology Conference, MNC 2002

Conference

Conference	International Microprocesses and Nanotechnology Conference, MNC 2002
Country/Territory	Japan
City	Tokyo
Period	02/11/6 → 02/11/8

Access to Document

10.1109/IMNC.2002.1178607

Cite this

Singh, V. K., Sasaki, M., Song, J. H., & Hane, K. (2002). Spray coated photoresist over anisotropically etched deep Si cavities. In 2002 International Microprocesses and Nanotechnology Conference, MNC 2002 (pp. 188-189). Article 1178607 (2002 International Microprocesses and Nanotechnology Conference, MNC 2002). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2002.1178607

@inproceedings{2880771b9a274175a714ba802513d8b5,

title = "Spray coated photoresist over anisotropically etched deep Si cavities",

abstract = "Up to now, we have demonstrated the lithography on the anisotropically wet-etched Si cavities and optical fiber ends. However the fundamental understanding or detailed data relating to the performance of the three-dimensional lithography are not clear. In this study, the photoresist thickness distribution is examined changing the resist drying condition.",

author = "Singh, {V. K.} and M. Sasaki and Song, {Jong Hyeong} and K. Hane",

note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; International Microprocesses and Nanotechnology Conference, MNC 2002 ; Conference date: 06-11-2002 Through 08-11-2002",

year = "2002",

doi = "10.1109/IMNC.2002.1178607",

language = "English",

series = "2002 International Microprocesses and Nanotechnology Conference, MNC 2002",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "188--189",

booktitle = "2002 International Microprocesses and Nanotechnology Conference, MNC 2002",

address = "United States",

}

Singh, VK, Sasaki, M, Song, JH & Hane, K 2002, Spray coated photoresist over anisotropically etched deep Si cavities. in 2002 International Microprocesses and Nanotechnology Conference, MNC 2002., 1178607, 2002 International Microprocesses and Nanotechnology Conference, MNC 2002, Institute of Electrical and Electronics Engineers Inc., pp. 188-189, International Microprocesses and Nanotechnology Conference, MNC 2002, Tokyo, Japan, 02/11/6. https://doi.org/10.1109/IMNC.2002.1178607

Spray coated photoresist over anisotropically etched deep Si cavities. / Singh, V. K.; Sasaki, M.; Song, Jong Hyeong et al.
2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc., 2002. p. 188-189 1178607 (2002 International Microprocesses and Nanotechnology Conference, MNC 2002).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Spray coated photoresist over anisotropically etched deep Si cavities

AU - Singh, V. K.

AU - Sasaki, M.

AU - Song, Jong Hyeong

AU - Hane, K.

PY - 2002

Y1 - 2002

N2 - Up to now, we have demonstrated the lithography on the anisotropically wet-etched Si cavities and optical fiber ends. However the fundamental understanding or detailed data relating to the performance of the three-dimensional lithography are not clear. In this study, the photoresist thickness distribution is examined changing the resist drying condition.

AB - Up to now, we have demonstrated the lithography on the anisotropically wet-etched Si cavities and optical fiber ends. However the fundamental understanding or detailed data relating to the performance of the three-dimensional lithography are not clear. In this study, the photoresist thickness distribution is examined changing the resist drying condition.

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U2 - 10.1109/IMNC.2002.1178607

DO - 10.1109/IMNC.2002.1178607

M3 - Conference contribution

AN - SCOPUS:84857675544

T3 - 2002 International Microprocesses and Nanotechnology Conference, MNC 2002

SP - 188

EP - 189

BT - 2002 International Microprocesses and Nanotechnology Conference, MNC 2002

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Microprocesses and Nanotechnology Conference, MNC 2002

Y2 - 6 November 2002 through 8 November 2002

ER -

Singh VK, Sasaki M, Song JH, Hane K. Spray coated photoresist over anisotropically etched deep Si cavities. In 2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc. 2002. p. 188-189. 1178607. (2002 International Microprocesses and Nanotechnology Conference, MNC 2002). doi: 10.1109/IMNC.2002.1178607

Spray coated photoresist over anisotropically etched deep Si cavities

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