TY - JOUR
T1 - Sputter film deposition to fabricate thick oxide films with extremely smooth surface suitable for room-temperature bonding
AU - Saito, T.
AU - Makita, H.
AU - Moriwaki, T.
AU - Suzuki, Y.
AU - Kato, N.
AU - Wakayanagi, S.
AU - Miura, A.
AU - Uomoto, M.
AU - Shimatsu, T.
N1 - Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
PY - 2020/2/1
Y1 - 2020/2/1
N2 - Energy-treatment sputtering (ETS), sputter film deposition performed during film growth with slight etching of the advancing surface with an ion-beam, can be applied to deposit SiO2 films on glass wafers. The surface roughness S a of 700 nm thick ETS-SiO2 film is 0.17 nm, which is remarkably lower than that of films deposited using conventional magnetron sputtering (S a = 0.78 nm). Moreover, the S a of 700 nm thick ETS-SiO2 film deposited on thick Al film having a rough surface of S a = 2.95 nm is only 0.24 nm. Bonding performance using ETS-SiO2 films is identical to that using SiO2 films with smooth surfaces obtained after chemical mechanical polishing.
AB - Energy-treatment sputtering (ETS), sputter film deposition performed during film growth with slight etching of the advancing surface with an ion-beam, can be applied to deposit SiO2 films on glass wafers. The surface roughness S a of 700 nm thick ETS-SiO2 film is 0.17 nm, which is remarkably lower than that of films deposited using conventional magnetron sputtering (S a = 0.78 nm). Moreover, the S a of 700 nm thick ETS-SiO2 film deposited on thick Al film having a rough surface of S a = 2.95 nm is only 0.24 nm. Bonding performance using ETS-SiO2 films is identical to that using SiO2 films with smooth surfaces obtained after chemical mechanical polishing.
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U2 - 10.7567/1347-4065/ab4c85
DO - 10.7567/1347-4065/ab4c85
M3 - Article
AN - SCOPUS:85081958703
SN - 0021-4922
VL - 59
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - SB
M1 - SBBC02
ER -