Sr                         2                         Rh                         1-x                         Ru                         x                         O                         4                          (0 ≤ x ≤ 1) composition-spread film growth on a temperature-gradient substrate by pulsed laser deposition

T. Wakisaka; T. Koida; Y. Matsumoto; K. Itaka; H. Koinuma

doi:10.1016/j.apsusc.2003.10.013

Sr ₂ Rh _1-x Ru _x O ₄ (0 ≤ x ≤ 1) composition-spread film growth on a temperature-gradient substrate by pulsed laser deposition

T. Wakisaka, T. Koida, Y. Matsumoto, K. Itaka, H. Koinuma

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

K ₂ NiF ₄ -type Sr ₂ Rh _1-x Ru _x O ₄ (0 ≤ x ≤ 1) composition-spread films were fabricated on (LaAlO ₃ ) _0.3 -(Sr ₂ AlTaO ₆ ) _0.7 (LSAT) substrate by using the combinatorial PLD method. From a temperature spread combinatorial deposition, Sr ₂ RhO ₄ (x = 0) is found to grow epitaxially only in a narrow temperature range, i.e. 735 ± 15 °C. By varying the composition and temperature along x and y axes of the substrate, respectively, two-dimensional (2D) libraries of Sr ₂ Rh _1-x Ru _x O ₄ (0 ≤ x ≤ 1) films were fabricated to map the growth temperature dependence of film crystallinity for the full range of x = 0-1. The optimum epitaxial growth temperature exhibited clear dependence on the compositional variation, x. From measurements of the electric conductivity of the films, metal-insulator-metal transitions were detected as the compositional parameter x increased from 0 to 1.

Original language	English
Pages (from-to)	264-267
Number of pages	4
Journal	Applied Surface Science
Volume	223
Issue number	1-3
DOIs	https://doi.org/10.1016/j.apsusc.2003.10.013
Publication status	Published - 2004 Feb 15
Externally published	Yes

Keywords

Composition-spread film
Pulsed laser deposition
Temperature-gradient substrate

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2003.10.013

Cite this

Wakisaka, T., Koida, T., Matsumoto, Y., Itaka, K., & Koinuma, H. (2004). Sr ₂ Rh _1-x Ru _x O ₄ (0 ≤ x ≤ 1) composition-spread film growth on a temperature-gradient substrate by pulsed laser deposition Applied Surface Science, 223(1-3), 264-267. https://doi.org/10.1016/j.apsusc.2003.10.013

Sr ₂ Rh _1-x Ru _x O ₄ (0 ≤ x ≤ 1) composition-spread film growth on a temperature-gradient substrate by pulsed laser deposition . / Wakisaka, T.; Koida, T.; Matsumoto, Y. et al.

In: Applied Surface Science, Vol. 223, No. 1-3, 15.02.2004, p. 264-267.

Research output: Contribution to journal › Article › peer-review

Wakisaka, T, Koida, T, Matsumoto, Y, Itaka, K & Koinuma, H 2004, ' Sr ₂ Rh _1-x Ru _x O ₄ (0 ≤ x ≤ 1) composition-spread film growth on a temperature-gradient substrate by pulsed laser deposition ', Applied Surface Science, vol. 223, no. 1-3, pp. 264-267. https://doi.org/10.1016/j.apsusc.2003.10.013

Wakisaka T, Koida T, Matsumoto Y, Itaka K, Koinuma H. Sr ₂ Rh _1-x Ru _x O ₄ (0 ≤ x ≤ 1) composition-spread film growth on a temperature-gradient substrate by pulsed laser deposition Applied Surface Science. 2004 Feb 15;223(1-3):264-267. doi: 10.1016/j.apsusc.2003.10.013

Wakisaka, T. ; Koida, T. ; Matsumoto, Y. et al. / Sr ₂ Rh _1-x Ru _x O ₄ (0 ≤ x ≤ 1) composition-spread film growth on a temperature-gradient substrate by pulsed laser deposition In: Applied Surface Science. 2004 ; Vol. 223, No. 1-3. pp. 264-267.

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abstract = " K 2 NiF 4 -type Sr 2 Rh 1-x Ru x O 4 (0 ≤ x ≤ 1) composition-spread films were fabricated on (LaAlO 3 ) 0.3 -(Sr 2 AlTaO 6 ) 0.7 (LSAT) substrate by using the combinatorial PLD method. From a temperature spread combinatorial deposition, Sr 2 RhO 4 (x = 0) is found to grow epitaxially only in a narrow temperature range, i.e. 735 ± 15 °C. By varying the composition and temperature along x and y axes of the substrate, respectively, two-dimensional (2D) libraries of Sr 2 Rh 1-x Ru x O 4 (0 ≤ x ≤ 1) films were fabricated to map the growth temperature dependence of film crystallinity for the full range of x = 0-1. The optimum epitaxial growth temperature exhibited clear dependence on the compositional variation, x. From measurements of the electric conductivity of the films, metal-insulator-metal transitions were detected as the compositional parameter x increased from 0 to 1.",

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N2 - K 2 NiF 4 -type Sr 2 Rh 1-x Ru x O 4 (0 ≤ x ≤ 1) composition-spread films were fabricated on (LaAlO 3 ) 0.3 -(Sr 2 AlTaO 6 ) 0.7 (LSAT) substrate by using the combinatorial PLD method. From a temperature spread combinatorial deposition, Sr 2 RhO 4 (x = 0) is found to grow epitaxially only in a narrow temperature range, i.e. 735 ± 15 °C. By varying the composition and temperature along x and y axes of the substrate, respectively, two-dimensional (2D) libraries of Sr 2 Rh 1-x Ru x O 4 (0 ≤ x ≤ 1) films were fabricated to map the growth temperature dependence of film crystallinity for the full range of x = 0-1. The optimum epitaxial growth temperature exhibited clear dependence on the compositional variation, x. From measurements of the electric conductivity of the films, metal-insulator-metal transitions were detected as the compositional parameter x increased from 0 to 1.

AB - K 2 NiF 4 -type Sr 2 Rh 1-x Ru x O 4 (0 ≤ x ≤ 1) composition-spread films were fabricated on (LaAlO 3 ) 0.3 -(Sr 2 AlTaO 6 ) 0.7 (LSAT) substrate by using the combinatorial PLD method. From a temperature spread combinatorial deposition, Sr 2 RhO 4 (x = 0) is found to grow epitaxially only in a narrow temperature range, i.e. 735 ± 15 °C. By varying the composition and temperature along x and y axes of the substrate, respectively, two-dimensional (2D) libraries of Sr 2 Rh 1-x Ru x O 4 (0 ≤ x ≤ 1) films were fabricated to map the growth temperature dependence of film crystallinity for the full range of x = 0-1. The optimum epitaxial growth temperature exhibited clear dependence on the compositional variation, x. From measurements of the electric conductivity of the films, metal-insulator-metal transitions were detected as the compositional parameter x increased from 0 to 1.

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