Stability of the fullerenes thin film deposited on the Si(100) surface

H. Rafil-Tabar, Y. Kawazoe, H. Kamiyama

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


We have performed a constant temperature classical molecular dynamics simulation of the epitaxial growth of a C60 monolayers film deposited on the dimerized Si(100) surface. Our simulation, based on non-central many-body inter-atomic potentials, is capable of predicting the structural stability of the C60 film and the Si substrate and provides a theoretical basis for the results of a recently-performed STM-based for this system. Three-dimensional geometries have been generated on computer and used for the animation of the simulation runs.

Original languageEnglish
Pages (from-to)467-471
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1993
EventProceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: 1993 Apr 121993 Apr 16


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