Abstract
We have performed a constant temperature classical molecular dynamics simulation of the epitaxial growth of a C60 monolayers film deposited on the dimerized Si(100) surface. Our simulation, based on non-central many-body inter-atomic potentials, is capable of predicting the structural stability of the C60 film and the Si substrate and provides a theoretical basis for the results of a recently-performed STM-based for this system. Three-dimensional geometries have been generated on computer and used for the animation of the simulation runs.
| Original language | English |
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| Pages (from-to) | 467-471 |
| Number of pages | 5 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 308 |
| Publication status | Published - 1993 |
| Event | Proceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA Duration: 1993 Apr 12 → 1993 Apr 16 |