We have performed a constant temperature classical molecular dynamics simulation of the epitaxial growth of a C60 monolayers film deposited on the dimerized Si(100) surface. Our simulation, based on non-central many-body inter-atomic potentials, is capable of predicting the structural stability of the C60 film and the Si substrate and provides a theoretical basis for the results of a recently-performed STM-based for this system. Three-dimensional geometries have been generated on computer and used for the animation of the simulation runs.
|Number of pages||5|
|Journal||Materials Research Society Symposium - Proceedings|
|Publication status||Published - 1993|
|Event||Proceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA|
Duration: 1993 Apr 12 → 1993 Apr 16