TY - GEN
T1 - Stabilization of temperature characteristics of micromirror for low-voltage driving using thin film torsion bar of tensile poly-Si
AU - Sasaki, Minoru
AU - Fujishima, Masayuki
AU - Hane, Kazuhiro
AU - Miura, Hideo
PY - 2008
Y1 - 2008
N2 - The micromirror with the tense thin film torsion bar can realize the low-voltage driving. The temperature characteristic is improved using polycrystalline (poly-) Si thin film taking advantage of the following features. The large tensile stress is obtained by the crystallization of amorphous (a-) Si film. The doping realizes the electrical connection. The poly-Si has the almost same coefficient of thermal expansion (CTE) with that of Si substrate.
AB - The micromirror with the tense thin film torsion bar can realize the low-voltage driving. The temperature characteristic is improved using polycrystalline (poly-) Si thin film taking advantage of the following features. The large tensile stress is obtained by the crystallization of amorphous (a-) Si film. The doping realizes the electrical connection. The poly-Si has the almost same coefficient of thermal expansion (CTE) with that of Si substrate.
KW - Crystallization induced stress
KW - Micromirror
KW - Temperature characteristics
KW - Tensile stress
KW - Thin film torsion bar
UR - http://www.scopus.com/inward/record.url?scp=54049096413&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=54049096413&partnerID=8YFLogxK
U2 - 10.1109/OMEMS.2008.4607858
DO - 10.1109/OMEMS.2008.4607858
M3 - Conference contribution
AN - SCOPUS:54049096413
SN - 9781424419180
T3 - 2008 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPT MEMS
SP - 120
EP - 121
BT - 2008 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPT MEMS
T2 - 2008 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPT MEMS
Y2 - 11 August 2008 through 14 August 2008
ER -