Stable bottom-contact organic thin-film transistor array with fluoropolymer dielectric for flexible displays

A stable bottom-contact organic thin-film transistor array with a fluoropolymer gate dielectric has been demonstrated on a plastic substrate. An air stable organic semiconductor material, DNTT, was used as the active layer in combination of an amorphous fluoropolymer Cytop gate dielectric. The device exhibited a near-zero turn-on voltage, a steep onset, and a low off current (<10^-13A). A low threshold voltage of 0.37 V and sub-threshold swing of 0.26 Vldecade was also achieved. Furthermore, the device showed excellent stability under ambient conditions without passivation. After gate bias stress of 10⁴s was applied, a small shift of V_TH below 1V was obtained.