A stable bottom-contact organic thin-film transistor array with a fluoropolymer gate dielectric has been demonstrated on a plastic substrate. An air stable organic semiconductor material, DNTT, was used as the active layer in combination of an amorphous fluoropolymer Cytop gate dielectric. The device exhibited a near-zero turn-on voltage, a steep onset, and a low off current (<10-13A). A low threshold voltage of 0.37 V and sub-threshold swing of 0.26 Vldecade was also achieved. Furthermore, the device showed excellent stability under ambient conditions without passivation. After gate bias stress of 104s was applied, a small shift of VTH below 1V was obtained.
|Number of pages||4|
|Publication status||Published - 2009|
|Event||16th International Display Workshops, IDW '09 - Miyazaki, Japan|
Duration: 2009 Dec 9 → 2009 Dec 11
|Conference||16th International Display Workshops, IDW '09|
|Period||09/12/9 → 09/12/11|