Stack structure dependence of Co/Ni multilayer for current-induced domain wall motion

Shunsuke Fukami, Tetsuhiro Suzuki, Hironobu Tanigawa, Norikazu Ohshima, Nobuyuki Ishiwata

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33 Citations (Scopus)

Abstract

We developed a film stack structure of Co/Ni with perpendicular magnetic anisotropy (PMA), which is suitable for current-induced domain wall (DW) motion. A Ta/Pt underlayer effectively provided a sufficiently large PMA to achieve the DW motion driven by a small current. The critical current density ( j c) had a minimum value at a Pt underlayer thickness (tUL) of 2.4nm and was insensitive to cap layer thickness (tcap). The dependence of jc on tUL and tcap can be accounted for in terms of the effective spin polarization.

Original languageEnglish
Article number113002
JournalApplied Physics Express
Volume3
Issue number11
DOIs
Publication statusPublished - 2010 Nov

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