Stack Structure Dependence of Magnetic Properties of PtMn/[Co/Ni] Films for Spin-Orbit Torque Switching Device

William A. Borders; Shunsuke Fukami; Hideo Ohno

doi:10.1109/TMAG.2017.2703817

Stack Structure Dependence of Magnetic Properties of PtMn/[Co/Ni] Films for Spin-Orbit Torque Switching Device

William A. Borders, Shunsuke Fukami, Hideo Ohno

Tohoku University

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We investigate the stack structure dependence of magnetic properties on thin films that consist of an antiferromagnetic PtMn and a ferromagnetic Co/Ni multilayer for field-free spin-orbit torque-induced magnetization switching devices. Magnetic parameters, such as the spontaneous magnetization, effective and interfacial magnetic anisotropies, and exchange bias field are quantified as a function of stack structure. Engineering of the stack allows the improvement of current-induced magnetization switching characteristics compared with a previous work, which is confirmed using patterned Hall cross devices.

Original language	English
Article number	7926446
Journal	IEEE Transactions on Magnetics
Volume	53
Issue number	11
DOIs	https://doi.org/10.1109/TMAG.2017.2703817
Publication status	Published - 2017 Nov

Keywords

Antiferromagnet
artificial neural networks (ANNs)
exchange bias
spin-orbit torque (SOT)

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10.1109/TMAG.2017.2703817

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title = "Stack Structure Dependence of Magnetic Properties of PtMn/[Co/Ni] Films for Spin-Orbit Torque Switching Device",

abstract = "We investigate the stack structure dependence of magnetic properties on thin films that consist of an antiferromagnetic PtMn and a ferromagnetic Co/Ni multilayer for field-free spin-orbit torque-induced magnetization switching devices. Magnetic parameters, such as the spontaneous magnetization, effective and interfacial magnetic anisotropies, and exchange bias field are quantified as a function of stack structure. Engineering of the stack allows the improvement of current-induced magnetization switching characteristics compared with a previous work, which is confirmed using patterned Hall cross devices.",

keywords = "Antiferromagnet, artificial neural networks (ANNs), exchange bias, spin-orbit torque (SOT)",

author = "Borders, {William A.} and Shunsuke Fukami and Hideo Ohno",

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AU - Fukami, Shunsuke

AU - Ohno, Hideo

N1 - Funding Information: ACKNOWLEDGMENT The authors would like to thank C. Igarashi, T. Hirata, H. Iwanuma, Y. Kawato, and K. Goto for technical support. This work was supported in part by the CSTI under Grant ImPACT Program and in part by the MEXT under Grant Research and Development Project for ICT Key Technology. Publisher Copyright: © 2017 IEEE.

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N2 - We investigate the stack structure dependence of magnetic properties on thin films that consist of an antiferromagnetic PtMn and a ferromagnetic Co/Ni multilayer for field-free spin-orbit torque-induced magnetization switching devices. Magnetic parameters, such as the spontaneous magnetization, effective and interfacial magnetic anisotropies, and exchange bias field are quantified as a function of stack structure. Engineering of the stack allows the improvement of current-induced magnetization switching characteristics compared with a previous work, which is confirmed using patterned Hall cross devices.

AB - We investigate the stack structure dependence of magnetic properties on thin films that consist of an antiferromagnetic PtMn and a ferromagnetic Co/Ni multilayer for field-free spin-orbit torque-induced magnetization switching devices. Magnetic parameters, such as the spontaneous magnetization, effective and interfacial magnetic anisotropies, and exchange bias field are quantified as a function of stack structure. Engineering of the stack allows the improvement of current-induced magnetization switching characteristics compared with a previous work, which is confirmed using patterned Hall cross devices.

KW - Antiferromagnet

KW - artificial neural networks (ANNs)

KW - exchange bias

KW - spin-orbit torque (SOT)

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Stack Structure Dependence of Magnetic Properties of PtMn/[Co/Ni] Films for Spin-Orbit Torque Switching Device

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