TY - JOUR
T1 - Stacking faults in an epitaxially grown PbTiO3 thick film and their size distribution
AU - Aoyagi, Kenta
AU - Kodama, Yumiko
AU - Kiguchi, Takanori
AU - Ehara, Yoshitaka
AU - Funakubo, Hiroshi
AU - Konno, Toyohiko J.
N1 - Funding Information:
This work has been supported by Global COE Program “Materials Integration International Center of Education and Research, Tohoku University”, provided by MEXT, Japan. The electron microscopy was carried out in the High-Voltage Electron Microscopy Center, Tohoku University. We thank Mr. E. Aoyagi and Mr. Y. Hayasaka for providing support for TEM observations.
PY - 2012/4/25
Y1 - 2012/4/25
N2 - The microstructure of an epitaxial PbTiO3 thick film, grown on a SrRuO3/SrTiO3 substrate at 600 °C by pulsed-MOCVD method, was investigated by using transmission electron microscopy. A number of extrinsic or intrinsic stacking faults were observed in the epitaxial PbTiO 3 thick film and they were parallel to the (0 0 1) plane of the PbTiO3. We also investigated the size distribution of these stacking faults. The width of these stacking faults along the [1 0 0] axis of the PbTiO3 was very small, ranging from 2 to 13 nm. It was also revealed that the size distribution of stacking faults depends on the position in the film: near the surface, near the substrate, near threading dislocations, and near 90° domain boundaries.
AB - The microstructure of an epitaxial PbTiO3 thick film, grown on a SrRuO3/SrTiO3 substrate at 600 °C by pulsed-MOCVD method, was investigated by using transmission electron microscopy. A number of extrinsic or intrinsic stacking faults were observed in the epitaxial PbTiO 3 thick film and they were parallel to the (0 0 1) plane of the PbTiO3. We also investigated the size distribution of these stacking faults. The width of these stacking faults along the [1 0 0] axis of the PbTiO3 was very small, ranging from 2 to 13 nm. It was also revealed that the size distribution of stacking faults depends on the position in the film: near the surface, near the substrate, near threading dislocations, and near 90° domain boundaries.
KW - Microstructure
KW - Stacking faults
KW - Transmission electron microscopy
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U2 - 10.1016/j.mseb.2012.01.013
DO - 10.1016/j.mseb.2012.01.013
M3 - Article
AN - SCOPUS:84859423445
SN - 0921-5107
VL - 177
SP - 528
EP - 531
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
IS - 7
ER -