Standby-power-free compact ternary content-addressable memory cell chip using magnetic tunnel junction devices

Shoun Matsunaga; Kimlyuki Hlyama; Atsushi Matsumoto; Shoji Ikeda; Haruhiro Hasegawa; Katsuya Miura; Jun Hayakawa; Tetsuo Endoh; Hideo Ohno; Takahiro Hanyu

doi:10.1143/APEX.2.023004

Standby-power-free compact ternary content-addressable memory cell chip using magnetic tunnel junction devices

Shoun Matsunaga, Kimlyuki Hlyama, Atsushi Matsumoto, Shoji Ikeda, Haruhiro Hasegawa, Katsuya Miura, Jun Hayakawa, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

Research output: Contribution to journal › Article › peer-review

80 Citations (Scopus)

Abstract

A compact ternary content-addressable memory (TCAM) cell of 3.15μ.m ² with a 0.14 μm complementary metal oxide semiconductor process is realized by the use of nonvolatile magnetic tunnel junction (MTJ) devices with spin-injection write. This TCAM cell based on logic-in-memory architecture with nonvolatile MTJs needs no standby power, yet allows instant shut-down of the supply voltage without data backup to an external nonvolatile device.

Original language	English
Article number	023004
Journal	Applied Physics Express
Volume	2
Issue number	2
DOIs	https://doi.org/10.1143/APEX.2.023004
Publication status	Published - 2009 Feb

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@article{cd7a58990c2e46988f45d475afffe080,

title = "Standby-power-free compact ternary content-addressable memory cell chip using magnetic tunnel junction devices",

abstract = "A compact ternary content-addressable memory (TCAM) cell of 3.15μ.m 2 with a 0.14 μm complementary metal oxide semiconductor process is realized by the use of nonvolatile magnetic tunnel junction (MTJ) devices with spin-injection write. This TCAM cell based on logic-in-memory architecture with nonvolatile MTJs needs no standby power, yet allows instant shut-down of the supply voltage without data backup to an external nonvolatile device.",

author = "Shoun Matsunaga and Kimlyuki Hlyama and Atsushi Matsumoto and Shoji Ikeda and Haruhiro Hasegawa and Katsuya Miura and Jun Hayakawa and Tetsuo Endoh and Hideo Ohno and Takahiro Hanyu",

year = "2009",

month = feb,

doi = "10.1143/APEX.2.023004",

language = "English",

volume = "2",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "2",

}

TY - JOUR

T1 - Standby-power-free compact ternary content-addressable memory cell chip using magnetic tunnel junction devices

AU - Matsunaga, Shoun

AU - Hlyama, Kimlyuki

AU - Matsumoto, Atsushi

AU - Ikeda, Shoji

AU - Hasegawa, Haruhiro

AU - Miura, Katsuya

AU - Hayakawa, Jun

AU - Endoh, Tetsuo

AU - Ohno, Hideo

AU - Hanyu, Takahiro

PY - 2009/2

Y1 - 2009/2

N2 - A compact ternary content-addressable memory (TCAM) cell of 3.15μ.m 2 with a 0.14 μm complementary metal oxide semiconductor process is realized by the use of nonvolatile magnetic tunnel junction (MTJ) devices with spin-injection write. This TCAM cell based on logic-in-memory architecture with nonvolatile MTJs needs no standby power, yet allows instant shut-down of the supply voltage without data backup to an external nonvolatile device.

AB - A compact ternary content-addressable memory (TCAM) cell of 3.15μ.m 2 with a 0.14 μm complementary metal oxide semiconductor process is realized by the use of nonvolatile magnetic tunnel junction (MTJ) devices with spin-injection write. This TCAM cell based on logic-in-memory architecture with nonvolatile MTJs needs no standby power, yet allows instant shut-down of the supply voltage without data backup to an external nonvolatile device.

UR - http://www.scopus.com/inward/record.url?scp=60349132341&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=60349132341&partnerID=8YFLogxK

U2 - 10.1143/APEX.2.023004

DO - 10.1143/APEX.2.023004

M3 - Article

AN - SCOPUS:60349132341

SN - 1882-0778

VL - 2

JO - Applied Physics Express

JF - Applied Physics Express

IS - 2

M1 - 023004

ER -

Standby-power-free compact ternary content-addressable memory cell chip using magnetic tunnel junction devices

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