TY - GEN
T1 - Statistical evaluation for anomalous SILC of tunnel oxide using integrated array TEG
AU - Kumagai, Yuki
AU - Teramoto, Akinobu
AU - Sugawa, Shigetoshi
AU - Suwa, Tomoyuki
AU - Ohmi, Tadahiro
PY - 2008
Y1 - 2008
N2 - We propose a new test-element-group (TEG) in order to study anomalous stress-induced leakage current (SILC) of tunnel oxide, which is a problem for flash memory reliability. Using this TEG, gate current through the tunnel oxide in the order of 10 A can be measured for about 1,000,000 transistors within 4 minutes. The behavior of anomalous SILC when Fowler-Nordheim (FN) electron tunneling stress is applied or measurement temperature is changed was investigated. It was detected that the anomalous SILC appears or disappears by applying stress and it was annealed out at high temperature measurement, as observed in flash memory cells. This TEG can be fabricated by simple processes, and its peripheral circuits are simple structures, so the tunnel dielectric can be changed drastically. We consider that using this TEG for the development of tunnel dielectric can lead to clarifying the origin of anomalous SILC, and promote the downscaling of tunnel dielectric thickness.
AB - We propose a new test-element-group (TEG) in order to study anomalous stress-induced leakage current (SILC) of tunnel oxide, which is a problem for flash memory reliability. Using this TEG, gate current through the tunnel oxide in the order of 10 A can be measured for about 1,000,000 transistors within 4 minutes. The behavior of anomalous SILC when Fowler-Nordheim (FN) electron tunneling stress is applied or measurement temperature is changed was investigated. It was detected that the anomalous SILC appears or disappears by applying stress and it was annealed out at high temperature measurement, as observed in flash memory cells. This TEG can be fabricated by simple processes, and its peripheral circuits are simple structures, so the tunnel dielectric can be changed drastically. We consider that using this TEG for the development of tunnel dielectric can lead to clarifying the origin of anomalous SILC, and promote the downscaling of tunnel dielectric thickness.
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U2 - 10.1109/RELPHY.2008.4558890
DO - 10.1109/RELPHY.2008.4558890
M3 - Conference contribution
AN - SCOPUS:51549113639
SN - 9781424420506
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - 219
EP - 224
BT - 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS
T2 - 46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS
Y2 - 27 April 2008 through 1 May 2008
ER -