Statistical evaluation of process damage using an arrayed test pattern in a large number of MOSFETs

Shunichi Watabe; Akinobu Teramoto; Kenichi Abe; Takafumi Fujisawa; Naoto Miyamoto; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.1109/TED.2010.2046080

Statistical evaluation of process damage using an arrayed test pattern in a large number of MOSFETs

Shunichi Watabe, Akinobu Teramoto, Kenichi Abe, Takafumi Fujisawa, Naoto Miyamoto, Shigetoshi Sugawa, Tadahiro Ohmi

New Industry Creation Hatchery Center (NICHe)

Tohoku University

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Evaluating the statistical variations of MOSFETs is important for realizing accurate analog circuits and large-scale-integration devices. A new evaluation method for the statistical variation of the electrical characteristics of MOSFETs is presented. We have developed a test circuit for understanding the statistical and local variations of MOSFETs in a very short time. We demonstrate that the electrical characteristics in more than one million MOSFETs, such as the threshold voltage (V_th) and the subthreshold swing (S-Factor), are measured in 30 min and that the measured results are very efficient in developing the fabrication process, the process equipment, and the device structure to reduce the statistical and local characteristic variation.

Original language	English
Article number	5456150
Pages (from-to)	1310-1318
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	57
Issue number	6
DOIs	https://doi.org/10.1109/TED.2010.2046080
Publication status	Published - 2010 Jun

Keywords

Fluctuation
Metal-oxide-silicon field-effect transistor (MOSFET)
Plasma damage
Statistical evaluation
Test structure
Variation

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10.1109/TED.2010.2046080

Cite this

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abstract = "Evaluating the statistical variations of MOSFETs is important for realizing accurate analog circuits and large-scale-integration devices. A new evaluation method for the statistical variation of the electrical characteristics of MOSFETs is presented. We have developed a test circuit for understanding the statistical and local variations of MOSFETs in a very short time. We demonstrate that the electrical characteristics in more than one million MOSFETs, such as the threshold voltage (Vth) and the subthreshold swing (S-Factor), are measured in 30 min and that the measured results are very efficient in developing the fabrication process, the process equipment, and the device structure to reduce the statistical and local characteristic variation.",

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AU - Teramoto, Akinobu

AU - Abe, Kenichi

AU - Fujisawa, Takafumi

AU - Miyamoto, Naoto

AU - Sugawa, Shigetoshi

AU - Ohmi, Tadahiro

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AB - Evaluating the statistical variations of MOSFETs is important for realizing accurate analog circuits and large-scale-integration devices. A new evaluation method for the statistical variation of the electrical characteristics of MOSFETs is presented. We have developed a test circuit for understanding the statistical and local variations of MOSFETs in a very short time. We demonstrate that the electrical characteristics in more than one million MOSFETs, such as the threshold voltage (Vth) and the subthreshold swing (S-Factor), are measured in 30 min and that the measured results are very efficient in developing the fabrication process, the process equipment, and the device structure to reduce the statistical and local characteristic variation.

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Statistical evaluation of process damage using an arrayed test pattern in a large number of MOSFETs

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Keywords

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